Development of High Resolution Beam-Profile Monitor for GeV Photon Beam

Spring-8的GeV光子束是由激光光子与8 GeV电子的后向康普顿散射产生的。通过4~6 eV激光光子的散射，获得了能量在2~4GeV范围内的光子束。这项研究的目的是开发一种高分辨率的束流轮廓监视器，这是GeV光子束调试所必需的。在1997财政年度，我们开发了硅条探测器(SSD)的原型。三种不同厚度的SSD分别用400 MeV的质子束和90Sr的β射线进行了测试。研究表明，300μm厚的薄膜最适合这一目的。在接下来的一年里，根据结果建造了一个512通道的SSD。此外，还研制了用于SSD高速读出系统的中继卡，并对其进行了测试。本研究开发的束流轮廓监测器将用于1999年5月在斯普林8进行的GeV光子束的调试。

The GeV photon beam at Spring-8 is produced by backward-Compton scattering of laser photons from 8 GeV electrons. The energy of the photon beam is in the range of 2 〜 4 GeV are obtained by scatterings of 4 〜 6 eV laser photons. The aim of this research is to develop a high resolution beam profile monitor which is essential for the commissioning of the GeV photon beam.In the fiscal year of 1997, we developed prototypes of the Silicon-Strip Detectors (SSD). Three SSDs with different thickness were tested with a 400 MeV proton beam as well as with β rays from 90Sr. The study showed the 300 μm-thick would be best for the purpose. In the following year, a 512-ch SSD was constructed based on the result. A repeater card for a high-speed readout system of the SSD was also developed and tested successfully.The beam profile monitor developed by this research will be used for the commissioning of GeV photon beam at SPring8 in May, 1999.