Impurity removal kinetics of hydrogen plasma arc melting
Impurity removal kinetics of hydrogen plasma arc melting
批准号:
08455344
负责人:
ISSHIKI Minoru
金额:
$4.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1998
中文摘要
研究发现,即使在常压下,氢等离子体电弧熔炼(HPAM)对杂质的去除也有很强的效果。本研究旨在阐明HPAM过程中杂质消除的机理。主要研究结果如下:热力学计算结果与实验结果吻合。这表明,在氩等离子体气体中加入氢可以使系统比氩等离子体熔化更快地达到类平衡状态。发现杂质的去除主要取决于杂质与母材之间的蒸汽压差,尽管Sb、P、O等几种杂质以氢化物的形式被去除。杂质去除遵循第一定律反应,分为两步,不同的去除速率。在较高浓度范围内(步骤1),随着等离子体气体中氢气浓度的增加,去除率显著增加。加氢也降低了从步骤1过渡到步骤2.4的杂质浓度。步骤1和步骤2的杂质消除分别受到气相和金属相边界层扩散的限制。热力学和数学模拟表明,氢的加入使等离子体电弧的性质和性能发生了剧烈的变化,并使熔融金属表面附近的温度升高。最后,发现HPAM作为一种新的精炼方法具有显著的性能,并将其应用于几种金属的提纯。
英文摘要
It has been found that hydrogen plasma arc melting (HPAM) has a strong effect on impurity removal even under an atmospheric pressure. The aim of this study is to clarify the mechanism of impurity elimination during HPAM.The main results are follows.1. The thermodynamic calculations agree with the experimental data on the impurity elimination. This indicates that hydrogen addition to the argon plasma gas allows the system to achieve the equilibrium like state much faster than argon plasma melting.2. It is found that the impurity removal mainly depends on the vapor pressure difference between the impurity and the base metal, although several impurities such as Sb, P and O are eliminated in the form of hydrides.3. Impurity removal obeys the first law reaction and consists of 2 steps with different elimination rates. In the higher concentration range (step 1), elimination rate remarkably increase with the hydrogen concentration of the plasma gas. Hydrogen addition also lowers the impurity concentration at the transition from step 1 to step 2.4. Impurity elimination of step 1 and 2 are found limited by diffusion through boundary layers in gas phase and metal phase, respectively.5. Thermodynamic and mathematical simulations clarify that hydrogen addition gives drastic change of the properties and performance of the plasma arc and increases the temperature in the vicinity of the molten metal surface.6.Finally, HPAM is found to possess an remarkable capability as a new refining method, which is confirmed by applying it to the purification of several metals.
期刊论文(19)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
D.Elanski: "Thermodymamicsimulation of systems with refractory metals melted by Ar-Hz plasma" Vacuum. 47. 849-852 (1996)
D.Elanski:“Ar-Hz 等离子体熔化的难熔金属系统的热力学模拟”真空。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
D.Elanski: "Refining elfect of Ar-Hz plasma arc melting of Nb-based alloy"
D.Elanski:“Ar-Hz等离子弧熔炼铌基合金的精炼效果”
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
D.Elanski: "Purification of tantalum by means of plasma arc metting" Materials Lett.30. 1-5 (1997)
D.Elanski:“通过等离子弧熔炼纯化钽”Materials Lett.30。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
A.M.Fudolich: "Prediction of Surface Temperature on Metal Beads Subjected to Argon-Hydrogen Transferred Arc Plasma Impingement" ISIJ Intern.37-6. 623-629 (1997)
A.M.Fudolich:“经受氩-氢转移电弧等离子体撞击的金属珠表面温度的预测”ISIJ Intern.37-6。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
三村耕司: "高純度化技術体系第2巻(P.887〜94)特殊溶解(電子溶解プラズママーク溶解)" フジテクノシステム, 1019 (1997)
Koji Mimura:“高净化技术系统第2卷(P.887-94)特殊熔化(电子熔化等离子标记熔化)”Fuji Techno System,1019(1997)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 19 条
Low Temperature Oxidation of Ultra-High Purity Metals and Stoichiometry Control of Oxide Films
-
批准号:17360366
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.06万
-
财政年份:2005
-
负责人:ISSHIKI Minoru
-
依托单位:
Single Crystal Growth and Stoichiometory Control of Ecologically Friendly Semiconductor β-FeSi_2
-
批准号:14350394
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.01万
-
财政年份:2002
-
负责人:ISSHIKI Minoru
-
依托单位:
海外基金