A STUDY OF LOW-DEMENTIONAL SURFACE PHASE FORMATION AND EPITAXY ON SILLICN SURFACE BY VERY LOW ENERGY ION BEAM DEPOSITION.

在10eV ~ 500eV的入射离子能量范围内，在Si（100）和Si（111）表面进行了银离子束沉积。在0.5ML的固定离子剂量量下，离子能量为100eV时，表面覆盖率最高，这是由于沉积原子的二维分布。在离子能量低于100eV时，沉积原子聚集形成三维孤岛。另一方面，能量高于100eV的离子被并入固体表面。LEED观测表明，离子沉积后，反映表面周期性结构的衍射斑点消失。而在570K左右退火时，沉积表面出现了清晰的衍射斑点。退火后Si（111）的结构为**3x**3结构，Si（100）的结构为1x1结构。在本研究项目期间，我们明确了离子动量对离子硅表面体系Ag ion-Si(100),（111）和Bi ion-Si(100),（111）表面相形成过程的影响。

Ag ion beam deposition has been performed on Si(100) and Si(111) surfaces at incident ion energy range of 10eV to 500eV. Under the fixed ion dose quantity of 0.5ML, the surface coverage was the highest in the ion energy of 100eV, which was due to the two dimensional distribution of the deposited atoms. In the ion energy, which was lower than 100eV, deposition atoms agglomerated to form the three dimensional islands. Other side, the ion was incorporated into the solid surface for the energy higher than 100eV. As a result of the LEED observation, the diffraction spots which reflected the surface periodic structure disappeared just after the ion deposition. However, clear diffraction spots appeared when the deposition surface was annealed at the temperature of about 570K. The structures which appeared after the annealing procedure were **3x**3 structure for Si(111) and 1x1 structure for Si(100).In the period of this research project, we cleared the effect of momentum of the ion on surface phase formation processes for the ion silicon surface systems, Ag ion- Si (100), (111) and Bi ion-Si (100), (111).