Development of amorphous transparent conductive oxide films and their applications to transparent electrodes

采用氧化锌和氧化铟陶瓷靶材同时溅射的方法制备了氧化锌-氧化锌透明导电膜。随着δ=锌/(锌+In)比的增加，出现了非晶相和同质相。讨论了这些薄膜的载流子产生机理。本征氧缺陷是In_2O_3-ZnO薄膜的主要施主。在非晶相薄膜中Ω=Zn/(Zn+In)的较窄范围内，获得了2~4×10^&lt；-4&gt；δcm的低电阻率。2wt%Al_2O_3掺杂使样品的电阻率降至1.5~2.1×10~(-4)Ωcm。当Al_2O_3掺杂3wt%和4wt%时，由于载流子浓度在δ=0.3-0.6时的增加，非晶相中较宽范围的δ的薄膜电阻率达到2-4×10~(-4)~(-4)。另一方面，掺杂在同系晶态薄膜中的Al_2O_3不起施主杂质的作用。Al_2O_3含量高于2wt_2O_3的非晶薄膜的光学带隙能与Al_2O_3含量成正比，归因于晶格畸变…用同样的方法制备了氧化锌和SnO2：Sb(Sb_2O_5掺杂3wt%)靶材。镀态薄膜的成分随电流比δ的变化而变化。当ts=150δ时，非晶态透明薄膜在0.47[小于或等于]℃[小于或等于]δ[小于或等于]0.80(锌/(锡+锌)=0.28~0.76)的范围内形成；当ts=250℃时，非晶态透明薄膜的形成范围为0.33[小于或等于]Pb3[小于或等于]0.73(锌/(锡+锌)=0.32~0.66)。当δ=0.6 2(锌/(锡+锌)=1/2)或6=0.73(锌/(锡+锌)=2/3)和其它任何比例时，在0.5[小于或等于]δ[小于或等于]0.6 2(小于或等于)δ[小于或等于]和(ZnSnO_3)_&lt；在0.62[小于或等于]δ[小于或等于]0.73(0[小于或等于]y[小于或等于]0.5)的范围内。在Ω=0.50时，沉积的非晶态薄膜的最小电阻率为3.6x10~(-2)&gt；δ(0.33)，TS=250℃。较少

We deposited In_2O_3-ZnO transparent conductive films by simultaneous sputtering of ZnO and In_2O_3 ceramic targets. Amorphous and homologous phases appeared with increasing δ=Zn/(Zn+In) ratios. Carrier generation mechanism was discussed for these films. Native oxygen defects are the primary donors for the In_2O_3-ZnO films. Then the low resistivities of 2〜4×10^<-4> Ω cm were attained within a narrow range of δ=Zn/(Zn+In) in the amorphous phase film. 2 wt% Al_2O_3-doping decreased the resistivity to 1.5〜2.1×10^<-4>Ωcm. At doping of 3 wt% and 4 wt% Al_2O_3, film resistivities of 2-4×10^<-4> were attained for a relatively wide range of δ in the amorphous phase due to an increase in carrier concentration at δ=0.3-0.6. On the other hand, Al_2O_3 doped in the homologous Zn_kIn_2O_<k+3> crystalline films did not act as donor impurities. The optical bandgap energy for the films deposited above 2 wt% Al_2O_3 for amorphous film was proportional to Al_2O_3 content, ascribed to lattice distortion … More by Al_2O_3. Post annealing under the reductive gas flow was effective on improving unevenness of the amorphous films.Thin films of ZnO-SnO_2 system were also deposited by the same method, where ZnO and SnO_2:Sb (Sb_2O_5 3wt% doped) targets were faced each other. Compositions in as-deposited films were changed with the current ratio δ. Amorphous transparent films appeared in a range of 0.47【less than or equal】δ【less than or equal】0.80 (Zn/(Sn+Zn)=0.28-0.76) at Ts=150℃, in a range of 0.33【less than or equal】δ【less than or equal】0.73 (Zn/(Sn+Zn)=0.32-0.66) at Ts=250℃. At δ=0.62 (Zn/(Sn+Zn)=1/2) or 6=0.73 (Zn/(Sn+Zn)=2/3) and any other ratio in as-deposited films we could obtain neither crystalline ZnSnO_3 nor Zn_2SnO_4 Amorphous films would exist as forms of (ZnSnO_3)_x(SnO_2)_<1-x> in a range of 0.5【less than or equal】δ【less than or equal】0.62 (0【less than or equal】δ【less than or equal】) and (ZnSnO_3)_<1-y>(ZnO)_y, in a range of 0.62【less than or equal】δ【less than or equal】0.73 (0【less than or equal】y【less than or equal】0.5). Minimum resistivity of amorphous films deposited was 3.6×10^<-2> Ωcm at δ=0.50 (Zn/(Sn+Zn)=0.33), Ts=250℃. Less