Development of High-Speed Dry Coating of Cu-Wiring Using Clean Metal-Arc Plasma

本项目的目的是利用阴极真空弧镀工艺代替目前的湿法电镀工艺，开发大规模集成电路器件针尖铜布线成膜的主要技术。在阴极真空电弧沉积中，采用固体金属作为真空电弧的阴极，利用阴极点直接蒸发金属，在没有任何气体的情况下，在金属蒸气等离子体中用离子镀膜。然而，阴极材料的微米级颗粒，即所谓的液滴，也是由于其爆炸现象而从阴极点发射出来的。液滴使膜的单边密封性降低，并可能堵塞布线沟槽。应从加工真空中取出液滴为等离子。在本项目中，真空电弧沉积系统利用弧离子通过弯管进行磁传输的技术来过滤等离子体中的液滴。主要结果如下：第一年：新的过滤弧形沉积…粗略设计了Y形过滤管道系统(Y-FAD)，其沉积速度比现有的T形过滤弧镀系统(T-FAD)提高了三倍。为了实现大面积沉积，设计并制作了高通量磁场等离子体束扫描仪。用该扫描仪获得了直径为100 mm、均匀的沉积。第二年：设计并部分制造了Y-FAD的细节。为了提高沉积速率，研究了在等离子体传输管道(过滤管道)上施加偏置电压的方法。结果发现，当施加适当的管道偏压时，沉积额定值增加了两到三倍。去年：双阴极蒸发源的Y-FAD已经完成搭建，并对其性能进行了测试。结果表明，新型Y-FAD能提供足够高的沉积速率和较宽的沉积面积。此外，还发现由于高速沉积，衬底温度上升很快，需要对衬底进行冷却。较少

The purpose of this project is that the development of principal technology of Cu-wiring film formation for LSI device tip by fry process using cathodic vacuum arc deposition, instead of current wet process of electroplating. In the cathodic vacuum arc deposition, solid metal is used as cathode of vacuum arc, the metal was directly evaporated by the cathode spot, and the film is plated by the ions in the metal vapor plasma without any gas. However ; the micron-order particles of cathode materials, so-called droplets, are also emitted from the cathode spot by its explosive phenomenon. The droplets have the film decreased unilbrmity and may block the wiring trench. The droplet should be removed from the processing vacuum are plasma. In this project, the vacuum arc deposition system with filtration of the droplets from the plasma using the technique of the arc plasma magnetically transporting through a bent duct. The principal outcomes are as follows.1st year : A new filtered arc depositi … More on system with Y shape filter duct (Y-FAD) was roughly designed, in which the deposition speed was expected to be three times higher than that in a current T-shape filtered arc deposition system (T-FAD). In order to realize the large area deposition, high-throughput plasma-beam scanner using magnetic field was designed and made. The 100 mm diameter deposition with well uniformity was attained with the scanner.2nd year: The detail of Y-FAD was deigned and partly manufactured. In order to improve the deposition rate, the method of applying the bias voltage to the plasma transportation duct (=filter duct) was examined. As a result, when the suitable duct bias was applied, it was found that the deposition rated increased twice to three times.Last year : The Y-FAD with two cathode evaporating sources has finished building up and its performance was examined. As a result, it was revealed the new Y-FAD can provide enough high-deposition rate and wide-deposition area. Furthermore, it was found that the substrate temperature increased quickly due to high-speed deposition and the substrate needed to be cooled. Less