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New Functional Optical Cross Connect using Quantum Dots Structure

New Functional Optical Cross Connect using Quantum Dots Structure
使用量子点结构的新功能光交叉连接
批准号:
17360169
负责人:
SHINOMURA Kazuhiko
金额:
$9.92万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2006

项目摘要

项目成果

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中文摘要
翻译
在WDM网络中,关键部件是波长复用器/解复用器,其联合收割机/分离波长信道。各种类型的解复用原理已经被提出并且已经在商业上可用,诸如阵列波导光栅(AWG)。在最新的论文中,我们提出了一种新的波长解复用器使用GaInAs/InP多量子阱(MQW)阵列波导中的折射率线性变化整个阵列。传统的AWG被设计成使得通过逐渐改变波导长度来获得相邻波导之间的相位差。然而,在所提出的设计中,相邻波导之间的相位差是通过改变波导厚度来实现的,波导厚度是波导的折射率。因此,可以实现直波导型波长解复用器。此外,由于阵列中波导的折射率可以被控制,因此该器件可以应用于波长切换 ...更多信息 由QCSE或TO效果动态控制。另一方面,通过Stranski-Krastanov(S-K)生长模式生长的自组装半导体量子点(QD)由于QD器件的单片集成而引起了广泛的关注。为了在单个集成光学器件中实现宽波长范围的QD,在同一平面中控制自组装QD尺寸的技术是重要的。在本计画中,我们研究了以量子点作为波导核心的变折射率阵列波导波长开关。在多量子阱结构的波长开关中,我们成功地实现了在折射率分布线性变化的直阵列波导中利用热光效应改变折射率的波长开关。我们得到了波导中折射率变化对输出端口波长解复用及其变化的影响。在量子点的研究中,我们采用非对称掩模的选择性MOVPE生长和量子点的双帽工艺,在InP衬底上自组装InAs量子点阵列波导,获得了140 nm波长范围的发射。这些结果对于实现光通信系统中的光交叉连接是非常有效的。少
英文摘要
In WDM networks, key components are the wavelength multi-/demultiplexers, which combine/separate wavelength channels. Various kind of demultiplexing principles have been proposed and already commercially available, such as arrayed-waveguide gratings (AWG). In the latest paper, we have proposed a novel wavelength demultiplexer using a GaInAs/InP multiple quantum well (MQW) arrayed waveguide in which refractive index varies linearly across the array. The conventional AWGs are designed so that phase differences between adjacent waveguides are obtained by gradually varying waveguide length. In the proposed design, however, phase differences between adjacent waveguides are achieved by varying the waveguide thickness which is the refractive indices of the waveguides. Therefore, it is possible to be realized a straight waveguide type wavelength demultiplexer. Furthermore, the device could be applied to wavelength switching since the refractive indices of the waveguides in the array can be con … More trolled dynamically by QCSE or TO effect. On the other hand, self-assembled semiconductor quantum dots (QDs) grown via the Stranski-Krastanov (S-K) growth mode have attracted much attention for the monolithic integration of QD devices. To realize wide wavelength range QDs in a single integrated optical device, a technique to control self-assembled QDs size in the same plane is important. In this project, we have studied the wavelength switch with refractive index varied arrayed waveguide using quantum dots in the waveguide core. In the wavelength switch using MQW structure, we have successfully demonstrated the wavelength switching in the straight arrayed waveguide with linearly varying refractive index distribution by changing the refractive index using thermo-optic effect. We have obtained the wavelength demultiplexing and its changing of the output ports by refractive index change in the waveguide. In the study of quantum dots, we have obtained the 140 nm wavelength emission range from the self-assembled InAs QDs array waveguides on the InP substrate by employing the selective MOVPE growth using asymmetrical mask and the double-cap procedure of QDs. These results are very effective for the realization of optical cross connects in the optical communication system. Less
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Improvements of crosstalk in variable-refractive index waveguide array demultiolexer
可变折射率波导阵列解复用器串扰的改进
DOI: --
发表时间: 2006
期刊: Conference on Lasers and Electro-Optics (CLEO 2006)
影响因子: --
作者: [T.Yoshioka, Y.Kawakita, D.Machida, K.Shimomura]
通讯作者: K.Shimomura
Size and Density Control of InAs Quantum Dots by Selective MOVPE Growth Using Narrow Stripe Mask Array
使用窄带掩模阵列选择性 MOVPE 生长控制 InAs 量子点的尺寸和密度
DOI: --
发表时间: 2005
期刊: Proceeding of IQEC and CLEO-PR 2005
影响因子: --
作者: [S.Okamoto, Y.Kawakita, K.Hirose, Y.Yamauchi, K.Shimomura]
通讯作者: K.Shimomura
Growth temperature and InAs supply dependences of InAs quantum dots on InP (001) substrate
InP (001) 衬底上 InAs 量子点的生长温度和 InAs 供应依赖性
DOI: --
发表时间: 2007
期刊: J. Crystal Growth 298
影响因子: --
作者: [T.Okawa, Y.Yamauchi, J.Yamamoto, J Yoshida, K.Shimomura]
通讯作者: K.Shimomura
Growth temperature and InAs supply dependences of InAs quantum dots on InP (0 0 1) substrate
InP (0 0 1) 衬底上 InAs 量子点的生长温度和 InAs 供应依赖性
DOI: --
发表时间: 2007
期刊: J.Crystal Growth vol.298
影响因子: --
作者: [T.Okawa, Y.Yamauchi, J.Yamamoto, J.Yoshida, K.Shimomura]
通讯作者: K.Shimomura
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