Monolithic 3D lntegration of Multlgate Poly-Si TFTs on a Flexible Glass Substrate

在550℃的玻璃衬底上制作了自对准上下金属双栅n、p沟道低温多晶硅薄膜晶体管（TFT）。n沟道和p沟道TFT的标称场效应迁移率分别为635 cm ^2/Vs和150 cm ^2/Vs，两种TFT的s值均为130 mV/dec。为了实现TFT的单片3D集成，低温TFT制造对于第二和第三TFT层是必要的。为此，我们研制了自对准激光激活顶栅氢化微晶硅（μc-Si：H）TFT，工艺温度为325℃，n沟道TFT线性区的场效应迁移率为1.1cm^2/Vs。

Self-aligned top and bottom metal double-gate n- and p-chlow-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at 550℃. The nominal field-effect mobility of the n- and p-ch TFTs was 635cm^2/Vs and 150cm^2/Vs, respectively, and the s-value of both TFTs was 130mV/dec. The performance characteristics can be used to realize low-power and high-speed circuits on a glass substrate. In order to achieve monolithic 3D integration of TFTs, low-temperature TFT fabrication are necessary for the second and third TFT layers. For this purpose, we developed self-aligned laser-activation top-gate hydrogenated microcrystalline silicon (μc-Si : H) TFTs at a process temperature of 325℃ and achieved a field-effect mobility of 1.1cm^2/Vs in the linear region for n-channel TFTs.