Atomic force spectroscopy of chemical bonding process with bias voltage tuning between a tip and a sample

本研究的目的是利用我们开发的偏置电压非接触原子力显微镜/光谱(BIAS NC-AFM/S)来揭示样品表面的原子与原子力显微镜尖端原子之间成键状态的形成过程。为此，我们研制了一种高灵敏度的力传感器，改进了偏置NC-AFM/S的电子控制系统，并对样品和NC-AFM针尖之间的力、电流和能量耗散进行了高灵敏度的同步测量。通过这项研究，我们得出结论：硅原子和硅原子之间的共价键的形成强烈地依赖于它们的局域电子态密度(LDOS)。

The purpose of this study was to reveal the formation process of bonding state between an atom of a sample surface and an atom at the tip apex of atomic force microscopy(AFM) using our developing bias-voltage non-contact atomic force microscopy/spectroscopy(bias nc-AFM/S). Towards this purpose we developed a force sensor with a high sensitivity, improved our electronic control system for the bias nc-AFM/S, and performed simultaneous measurements with high sensitivities of force, electric current and energy dissipation between the sample and the nc-AFM tip. Through this study we concluded that the covalent bond formation between a Si atom and a Si atom strongly depends on their local electronic density of states(LDOS).