The investigation of heat and mass transfer phenomenon for the GaAs single crystal growth solid-fluid interface control.

本研究的目的是阐明砷化镓单晶生长过程中的热质传递现象。为了弄清熔体的复杂流动现象，利用可视化实验装置对模拟生长装置的坩埚内熔体的流动进行了观察。并对不同晶体直径和晶体长度下的生长装置进行了热工水力学数值计算，通过与单晶生长实验结果的对比验证，试图对实际现象进行说明。研究结果在一定程度上澄清了熔体的流动特性。还能够阐明在不同晶体直径和晶体长度下的设备中的热和流动特性。

The objective of this study is to clarify heat and mass transfer phenomenon in the GaAs single crystal growth. In order to clarify complicated flow phenomenon of the melt, flow observation of the melt in the crucible which was simulated the growth device was carried out using the visualization experiment equipment. And, thermal hydraulics numerical calculation in the growth device at various crystal diameters and crystal length was conducted and the elucidation of the actual phenomenon was tried by verifying in comparison with single crystal growth experimental result. Flow characteristic of the melt was able to be clarified to some extent by this study. It was also able to be clarified a heat and flow characteristic in the equipment at the different crystal diameters and crystal length.