Study on high-performance current-injected semiconductor-based wavelength conversion devices

我们已经研究了高性能的波长转换器件制造的半导体表现出二次光学非线性。我们已经优化了工艺条件，以实现更高的转换效率，用于制造低损耗的反相GaAs/AlGaAs波导准相位匹配（QPM）器件。在波长为1.55 μ m时，获得的最低传输损耗为1.3dB/cm。我们首次对电流注入AlGaAs准相位调制器件的性能进行了数值模拟。我们已经发现，实际的电流密度导致净增益，从而极高的转换效率。我们首次制作了一种倒置的GaAs pn结器件，并对其电学和光学特性进行了评价。

We have investigated high-performance wavelength conversion devices fabricated using semiconductors exhibiting quadratic optical nonlinearities. We have optimized process conditions for fabricating low-loss periodically-inverted GaAs/AlGaAs waveguiding quasi-phase-matching (QPM) devices in order to achieve higher conversion efficiencies. The obtained lowest propagation loss was 1.3 dB/cm at the wavelength of 1.55 um. We have performed a numerical simulation on performances of current-injected AlGaAs QPM devices for the first time. We have revealed that practical current densities lead to net gains and thus extremely high conversion efficiencies. We fabricated a periodically-inverted GaAs pn-junction device for the first time, and evaluated its electrical and optical properties.