Research on interface stabilization of diamond junction for developing practical device applications

研究了用于高压工作的金刚石肖特基势垒二极管（SBD）器件的制备工艺。利用碳化钨作为SBD金属，在600K以下的温度范围内实现了器件的热稳定运行。发现SBD金属的后退火对于稳定界面是有效的。为了提高SBD的性能，探索了既能满足更高结晶质量又能生长更厚金刚石膜的生长条件。抑制衬底蚀刻是在高硼掺杂衬底上利用更高的微波功率密度生长金刚石的关键。

Device fabrication procedure of diamond Schottky barrier diodes (SBD) for high voltage operation was investigated. By utilizing tungsten carbide as SBD metal, thermally stable device operation was obtained in the temperature range below 600K. Post annealing of SBD metals is found to be efficient for stabilizing the interface.For the purpose of improving SBD performance, growth condition that satisfies both higher crystalline quality and thicker diamond film growth was explored. Then suppression of substrate etching is crucial for diamond growth on highly boron doped substrate using higher microwave power density.