Active Sensor Structures for Extreme Environments
Active Sensor Structures for Extreme Environments
批准号:
EP/I037660/1
负责人:
Alton Horsfall
金额:
$60.51万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2011
资助国家:
英国
项目状态:
已结题
起止时间:
2011 至 --
中文摘要
可以在极端条件下工作的气体传感器是应对气候变化、未来部署核技术和大量科学应用的重要基础技术。该项目将开发实现这些传感器所需的技术,并证明它们在具有代表性的敌对环境中的适用性。交付成果将使英国社会直接受益,因为它允许在使用当前技术无法到达的位置进行具有成本效益的气体浓度测量;例如核设施、地外行星、活火山以及汽车或航空航天应用中的废气。通过开发使用碳化硅技术制造的设备,我们打算展示气体传感阵列,它将提供区分混合气体成分的能力,并可以在极端条件下工作(例如在温度超过600摄氏度和高辐射通量)。这些传感器阵列还将与单片制造的放大器结构相结合,以增加信噪比,从而允许检测较低浓度。这种技术将使许多工业和公用事业技术首次实现闭环控制,从而提高效率和安全性。
英文摘要
Gas sensors that can operate under extreme conditions are an essential underpinning technology in the battle against climate change, the future deployment of nuclear technology and a whole raft of scientific applications. This project will develop the technology required to realise these sensors and demonstrate their applicability in representative hostile environments. The deliverables will directly benefit UK society by allowing the cost-effective measurement of gas concentrations in locations which are inaccessible using current technology; such as nuclear installations, extra terrestrial planets, active volcanoes and exhaust gases in automotive or aerospace applications. By developing devices fabricated using silicon carbide technology, we intend to demonstrate gas sensing arrays, which will offer the ability to discriminate between the components of a mixture of gases and can operate under extreme conditions (for example in temperatures beyond 600C and high radiation flux). These sensor arrays will also be combined with monolithically fabricated amplifier structures to increase the signal to noise ratio and hence allow the detection of lower concentrations. Such technology will allow closed loop control for the first time of many industrial and utility technologies - increasing efficiency and safety.
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4H-SiC VJFETs with Self-Aligned Contacts
具有自对准触点的 4H-SiC VJFET
DOI:
10.4028/www.scientific.net/msf.821-823.793
发表时间:
2015
期刊:
Materials Science Forum
影响因子:
--
作者:
[Zekentes K]
通讯作者:
Zekentes K
Characterisation of Interfaces in 4H-SiC high-K MOS Structures
4H-SiC 高 K MOS 结构中的界面表征
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[Roy, S.K.]
通讯作者:
Roy, S.K.
DOI:
10.1109/icsens.2015.7370504
发表时间:
2015
期刊:
影响因子:
--
作者:
[Chan H]
通讯作者:
Chan H
Silicon nitride encapsulation to preserve ohmic contacts characteristics in high temperature oxygen rich environments
氮化硅封装可在高温富氧环境中保持欧姆接触特性
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[Roy, S.K.]
通讯作者:
Roy, S.K.
SiC gas sensor arrays for extreme environments
适用于极端环境的 SiC 气体传感器阵列
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Roy, S.K.]
通讯作者:
Roy, S.K.
共 8 条
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批准号:EP/X033120/1
-
项目类别:Research Grant
-
资助金额:$65.04万
-
财政年份:2023
-
负责人:Alton Horsfall
-
依托单位:
国内基金
海外基金
人类NADPH sensor蛋白HSCARG调控机制研究
-
批准号:30930020
-
项目类别:重点项目
-
资助金额:170.0万元
-
批准年份:2009
-
负责人:郑晓峰
-
依托单位:
基于sensor agent的营养液组分动态测量与建模研究
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批准号:60775014
-
项目类别:面上项目
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资助金额:28.0万元
-
批准年份:2007
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负责人:陈锋
-
依托单位: