QD transistors and matrix arrays for wafer scale integration

溶液处理的胶体半导体量子点为降低成本和扩大许多电子和光电子器件的通用性提供了巨大的潜力。最初用作研究紧密排列的量子点薄膜中载流子迁移率的研究工具，以量子点为有源层的场效应晶体管（FET）最近在性能上取得了突破（实现了高于100 cm2 V-1 s-1的迁移率），这是由于在器件加工过程中正确选择表面配体和/或改进纳米颗粒薄膜的化学处理。CdSe和PbS量子点在fet中表现出了显著的迁移性能，但在这些通用的溶液处理fet能够很好地集成到晶圆级有源器件技术之前，必须远离Cd和Pb等有毒元素，并获得良好的迁移性能。在这个CDT项目中，将有三个目标：1)开发基于III-V或II-VI化合物半导体（InP, GaP, AlP, InSb, CuInSe2）的QD fet。2)研究高性能晶圆级FET矩阵制造和集成的材料加工、器件设计和操作参数。3)利用超快光谱技术理解电场诱导电荷输运动力学。

Solution processed colloidal semiconductor quantum dots offer a high potential for decreasing costs and expanding versatility of many electronic and optoelectronic devices. Initially used as a research tool to study charge carrier mobilities in closely packed quantum dot thin films, field effect transistors (FET) with quantum dots as the active layer have recently experienced a breakthrough in performance (achievement of mobilities higher than 100 cm2 V-1 s-1) as a result of a proper choice of surface ligands and/or improved chemical treatment of the nanoparticle films during device processing. CdSe and PbS QDs have shown remarkable mobilities in FETs, but it is essential to get away from toxic elements such as Cd and Pb, and obtain a good mobility performance before these versatile and solution-processed FETs can be well-integrated into wafer scale active device technologies. In this CDT project, there will be three objectives: 1) Developing QD FETs based on III-V or II-VI compound semiconductors (InP, GaP, AlP, InSb, CuInSe2). 2) Investigating materials processing, device design and operation parameters for high performance wafer-scale FET matrix fabrication and integration. 3) Understanding electric-field induced charge transport dynamics using ultrafast spectroscopy.