CDT Compound Semiconductor Physics (PhD Progression 1+3)

含有量子点有源区域的激光器在广泛可调谐半导体激光器、半导体光放大器、锁模激光器和光子集成电路等领域具有很大的应用优势。在每种情况下，最佳外延设计是不同的，尽管基于共同的材料系统和类似的物理。随着卡迪夫-伦敦大学学院团队最近在1300nm发射量子点材料的设计、生长和制造方面取得的进展，我们看到了开发外延平台以支持世界领先设备性能的机会。我们最近展示了IQE在150mm和200mm基板上以制造规模生长的QD激光器，但在晶圆上具有相当大的可变性。为了取得进展，我们需要了解可变性的起源，需要对生长中的这种可变性不敏感的设计，并且针对上述每种应用分别进行优化。或者，我们需要晶圆上表征，以便在完全制造之前识别整个晶圆或晶圆的区域，以用于特定类型的器件。我们设想，与材料种植者和团队的其他成员密切合作，并对设计、生长、制造和表征之间的复杂关系有很好的理解，这将是创造世界领先技术所必需的。

Lasers containing Quantum Dot (QD) active regions offer substantial advantages for application in widely tuneable semiconductor lasers, in semiconductor optical amplifiers, in mode-locked lasers and in Photonic Integrated Circuits. In each case the Optimum Epitaxial design is different, albeit based on a common material system and similar physics. Following recent advances made by the Cardiff-UCL team in the design, growth and fabrication of 1300nm emitting QD materials, we see an opportunity to develop epitaxy platforms to support world leading device performance. We have recently demonstrated QD lasers grown by IQE at manufacturing scale on 150mm and 200mm substrates but with considerable variability across the wafer. To make progress we need to understand the origin of the variability, need designs that are insensitive to this variability in the growth, and that are separately optimised for each of the applications above. Alternatively we need on-wafer characterisation that enables the identification of whole wafers or regions of a wafer to be utilised for particular types of device prior to full fabrication. We envisage that close cooperation with material growers and the rest of the team and the development of a very good understanding of the complex relationships between design, growth fabrication and characterisation will be necessary to create a world leading technology.