Ultra short gate length diamond FETs for high power/high frequency applications

电子金刚石生长和加工的最新进展使人们得以一窥这种令人兴奋的材料系统所能提供的潜在器件性能和应用。独特的和非常理想的材料特性，如大带隙，高固有迁移率和非常高的热导率，认为金刚石是高功率/高频器件实现的最终材料。这与超小特征处理潜力相结合，指向超短栅极长度FET技术作为这种独特材料系统应用的明显选择。在这项工作中，建议研究10纳米T-栅金刚石FET，从而形成一种能够满足高功率/高频操作不断扩大的需求的器件技术。特别地，该技术应用于增加太赫兹成像系统的源功率，其目前对于安全和医学成像应用非常感兴趣。该研究的主要目标是使用英国提供的高质量金刚石材料进行切割。的公司元素6和使用广泛的制造和表征设施在格拉斯哥大学。特别是，最近委托的Vistek VB 6电子束光刻工具的超高分辨率能力的访问，提供了一个直接的路线，以实现这种超小尺寸的设备。

Recent advances in the growth and processing of electronic diamond have provided a glimpse into the potential device performance and applications that this exciting material system can provide. Unique and highly desirable material properties such as large bandgap, high intrinsic mobility and very high thermal conductivity deem diamond the ultimate material for high power/high frequency device realisation. This combined with ultra small feature processing potential, points towards an ultra short gate length FET technology as the obvious choice for the application of such a unique material system. For this work it is proposed that 10nm T-gate diamond FETs be investigated leading to a device technology that can satisfy the expanding demand for high power / high frequency operation. In particular this technology finds application in increasing the source power of Terahertz imaging systems, which currently are of great interest for security and medical imaging applications. This prime goal of the proposed research is accomplishable using high quality diamond material supplied by U.K. based company Element 6 and use of the extensive fabrication and characterisation facilities at the University of Glasgow. In particular, access to the ultra-high resolution capabilities of the recently commissioned Vistek VB6 electron beam lithography tool, provides a direct route to the realisation of such ultra-small dimension devices.