Low Pressure Chemical Vapour Deposition Growth of Graphene for Electronic Component Applications**

石墨烯因其前所未有的材料性能和对微电子器件、纳米材料和其他应用的潜在影响而引起全球关注。迄今为止，许多研究都依赖于小面积剥离的石墨烯，这是一种禁止大规模制造设备的方法。通过化学气相沉积（CVD）沉积大面积石墨烯在过去几年中在迁移率、晶粒尺寸和成本方面有所改善，但CVD石墨烯生长仍有很大的改进空间。该项目是肯尼迪实验室和滑铁卢大学之间的合作，旨在探索低压CVD作为在各种衬底材料上生长高质量，大面积石墨烯的手段。成功的结果将使加拿大成为工业质量石墨烯的来源，这将使工业和学术部门的新技术开发成为可能。

Graphene has attracted global attention for its unprecedented material performance and potential impact on microelectronic devices, nano-materials, and other applications. Much research to date relies on small-area exfoliated graphene, which is a prohibitive method for scaled-up manufacturing of devices. Deposition of large-area graphene by chemical vapour deposition (CVD) has improved over the last few years with respect to mobility, grain size and cost, yet there is significant room for improvement in CVD graphene growth. This project is a collaboration between Kennedy Labs and the University of Waterloo that aims to explore low-pressure CVD as a means for growing high-quality, large-area graphene on a variety of substrate materials. A successful outcome will establish Canada as a source of industrial-quality graphene that will enable new technology development in both the industrial and academic sectors.