Engineering Specialized Research Equipment: Research Ellipsometer For Thin Film Measurements
Engineering Specialized Research Equipment: Research Ellipsometer For Thin Film Measurements
批准号:
7910888
负责人:
Tso-Ping Ma
金额:
$1.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1979
资助国家:
美国
项目状态:
已结题
起止时间:
1979-07-15 至 1980-12-31
中文摘要
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英文摘要
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会议论文
A thorough Investigation of Negative Capacitance Model for Ferroelectric-Gated MOSFETs
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批准号:1941316
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项目类别:Standard Grant
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资助金额:$25.0万
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财政年份:2020
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负责人:Tso-Ping Ma
-
依托单位:
NSF/ENG/ECCS-BSF: Dynamically configurable memory technology based on ferroelectric-gated field effect transistors
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批准号:1609162
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项目类别:Standard Grant
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资助金额:$34.5万
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财政年份:2016
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负责人:Tso-Ping Ma
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依托单位:
Inelastic Electron Tunneling Spectroscopy Studies of Advanced Gate Dielectrics
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批准号:0096762
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项目类别:Continuing Grant
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资助金额:$35.15万
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财政年份:2001
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负责人:Tso-Ping Ma
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依托单位:
Gate Dielectric for Scaled CMOS Technology
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批准号:9817869
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项目类别:Continuing Grant
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资助金额:$18.0万
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财政年份:1999
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负责人:Tso-Ping Ma
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依托单位:
Jet Vapor Deposited Silicon Nitride Films for ULSI Applications
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批准号:9520430
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项目类别:Continuing Grant
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资助金额:$25.0万
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财政年份:1995
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负责人:Tso-Ping Ma
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依托单位:
U.S.-China Cooperative Research: Studies of Nitrided and Fluorinated Thin Gate Oxides for Advanced MOS Technology
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批准号:9424636
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项目类别:Standard Grant
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资助金额:$13.66万
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财政年份:1995
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负责人:Tso-Ping Ma
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依托单位:
Channel Mobility Degradation in Very ThinGate Oxide MOSFET's
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批准号:8722501
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项目类别:Standard Grant
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资助金额:$8.0万
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财政年份:1988
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负责人:Tso-Ping Ma
-
依托单位:
Channel Mobility Degradation in Very Thin Gate Oxide MOSFETs
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批准号:8412832
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项目类别:Continuing Grant
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资助金额:$22.2万
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财政年份:1984
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负责人:Tso-Ping Ma
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依托单位:
Optoelectronic Properties of Mis (Metal-Insulator- Semiconductor) Tunnel Junctions
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批准号:8308403
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项目类别:Continuing Grant
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资助金额:$4.7万
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财政年份:1983
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负责人:Tso-Ping Ma
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依托单位:
Optoelectronic Properties of Tunnel Junctions
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批准号:7906933
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项目类别:Continuing Grant
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资助金额:$12.58万
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财政年份:1979
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负责人:Tso-Ping Ma
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依托单位:
海外基金