Channel Mobility Degradation in Very ThinGate Oxide MOSFET's

当MOSFET晶体管的栅极氧化层厚度缩小时， 到100 A以下，有强有力的证据表明， 导电沟道中的迁移率随着栅极 氧化层厚度 本研究的目的是（91） 实验性地建立通道之间的关系 p沟道和n沟道的迁移率和栅氧化层厚度 器件的厚度范围很广（30-200 A），目标是 发展出一套经验公式， 未来的设备模拟;和（2）理论上模拟 厚度依赖迁移率行为的基础上， 散射机制 此外，有关的重要问题 到非常薄的氧化物MOSFET器件的处理将是 系统地调查，结果应该是相关的 涉及VLSI器件的实际缩小。

As the gate oxide thickness of a MOSFET transistor shrinks down to below 100 A, there is strong evidence that the carrier mobility in the conduction channel is reduced systematically with gate oxide thickness. The objective of this research is to 91) experimentally establish the relationship between the channel mobility and the gate oxide thickness for both p- and n- channel devices over a wide range of thicknesses(30-200 A), with a goal toward the development of a set of empirical equations useful for future device simulations; and (2) theoretically model the thickness-dependent mobility behavior based on fundamental scattering mechanisms. In addition, important issues pertinent to the processing of very thin oxide MOSFET devices will be systematically investigated, and the results should be relevant to practical down scaling of VLSI devices.