Channel Mobility Degradation in Very ThinGate Oxide MOSFET's

当MOSFET晶体管的栅极氧化层厚度减小到100a以下时，有强有力的证据表明，导通通道中的载流子迁移率随着栅极氧化层厚度系统地降低。本研究的目的是通过实验建立p沟道和n沟道器件在宽厚度范围内（30-200 a）的沟道迁移率和栅极氧化物厚度之间的关系，目标是开发一套对未来器件模拟有用的经验方程；(2)基于基本散射机制对厚度随迁移率行为进行理论建模。此外，与超薄氧化MOSFET器件的加工有关的重要问题将被系统地研究，其结果应该与VLSI器件的实际缩小有关。

As the gate oxide thickness of a MOSFET transistor shrinks down to below 100 A, there is strong evidence that the carrier mobility in the conduction channel is reduced systematically with gate oxide thickness. The objective of this research is to 91) experimentally establish the relationship between the channel mobility and the gate oxide thickness for both p- and n- channel devices over a wide range of thicknesses(30-200 A), with a goal toward the development of a set of empirical equations useful for future device simulations; and (2) theoretically model the thickness-dependent mobility behavior based on fundamental scattering mechanisms. In addition, important issues pertinent to the processing of very thin oxide MOSFET devices will be systematically investigated, and the results should be relevant to practical down scaling of VLSI devices.