Channel Mobility Degradation in Very ThinGate Oxide MOSFET's

当MOSFET晶体管的栅氧化层厚度减小到100A以下时，有强有力的证据表明，导通沟道中的载流子迁移率随着栅氧化层厚度的增加而系统地降低。这项研究的目的是在很大的厚度范围(30-200A)上实验建立p沟道和n沟道器件的沟道迁移率和栅氧化层厚度之间的关系，目的是为了开发一组对未来器件模拟有用的经验方程；(2)基于基本散射机制对厚度依赖的迁移率行为进行了理论模拟。此外，还将系统地研究与超薄氧化物MOSFET器件工艺相关的重要问题，其结果应与VLSI器件的实际小型化相关。

As the gate oxide thickness of a MOSFET transistor shrinks down to below 100 A, there is strong evidence that the carrier mobility in the conduction channel is reduced systematically with gate oxide thickness. The objective of this research is to 91) experimentally establish the relationship between the channel mobility and the gate oxide thickness for both p- and n- channel devices over a wide range of thicknesses(30-200 A), with a goal toward the development of a set of empirical equations useful for future device simulations; and (2) theoretically model the thickness-dependent mobility behavior based on fundamental scattering mechanisms. In addition, important issues pertinent to the processing of very thin oxide MOSFET devices will be systematically investigated, and the results should be relevant to practical down scaling of VLSI devices.