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U.S.-China Cooperative Research: Studies of Nitrided and Fluorinated Thin Gate Oxides for Advanced MOS Technology

中美合作研究：用于先进 MOS 技术的氮化和氟化薄栅氧化物的研究

基本信息

批准号：
9424636
负责人：
Tso-Ping Ma
金额：
$ 13.66万
依托单位：
Yale University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
1995
资助国家：
美国
起止时间：
1995-07-01 至 1998-06-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9424636&HistoricalAwards=false
关键词：
U.S.China Cooperative Research Studies

项目摘要

9424636 Ma This proposed research project, to be conducted jointly by researchers at Yale and at the Xinjiang Institute of Physics of the Chinese Academy of Sciences, is designed to answer some important scientific questions concerning advanced thin gate dielectrics for future generations of MOS (Metal-Oxide- Semiconductor) integrated circuit technology. The objective of this collaborative research project is to achieve a better understanding of the role of nitrogen and fluorine in improving the thin gate oxide reliability. In particular, we hope to answer the questions as to (i) how the concentration and spatial distribution of nitrogen or fluorine affect the electrical properties of the gate oxide, (ii) how the concentration and spatial distribution of nitrogen or fluorine affect the hot-carrier effects (including dielectric breakdown) as well as radiation effects in MOS devices, (iii) whether/how the incorporation of nitrogen or fluorine affect the hydrogen migration in the oxide, (iv) whether/how the incorporation of nitrogen or fluorine causes strain relaxation near the SiO 2/Si interface, and (v) how the processing parameters affect the concentration and distribution of nitrogen or fluorine. The knowledge to be gained from this research could serve as a useful guide for the semiconductor industry in their process development, and thereby help to accelerate the development of this advanced gate oxide technology to commercial maturity.

9424636 Ma 该研究项目由耶鲁大学和中国科学院新疆物理研究所的研究人员联合开展，旨在回答有关未来几代MOS（金属氧化物半导体）集成电路技术的先进薄栅极电介质的一些重要科学问题。该合作研究项目的目的是更好地了解氮和氟在提高薄栅极氧化物可靠性方面的作用。特别是，我们希望回答以下问题：（i）氮或氟的浓度和空间分布如何影响栅极氧化物的电性能，（ii）氮或氟的浓度和空间分布如何影响MOS器件中的热载流子效应（包括介电击穿）以及辐射效应，（iii）氮或氟的掺入是否/如何影响栅极氧化物中的氢迁移氧化物，(iv)氮或氟的掺入是否/如何引起SiO 2/Si界面附近的应变弛豫，以及(v)加工参数如何影响氮或氟的浓度和分布。从这项研究中获得的知识可以为半导体行业的工艺开发提供有用的指导，从而有助于加速这种先进栅极氧化物技术的商业成熟。