课题基金 / 基金详情

Channel Mobility Degradation in Very Thin Gate Oxide MOSFETs

Channel Mobility Degradation in Very Thin Gate Oxide MOSFETs
极薄栅极氧化物 MOSFET 中的沟道迁移率下降
批准号:
8412832
负责人:
Tso-Ping Ma
金额:
$22.2万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1984
资助国家:
美国
项目状态:
已结题
起止时间:
1984-12-15 至 1988-05-31

项目摘要

项目成果

Tso-Ping Ma的其他基金

相似基金

相关文献

中文摘要
翻译
当金属氧化物半导体(MOS)晶体管的栅氧化层厚度减小到10 nm以下时,有强有力的证据表明,导通沟道中的载流子迁移率随栅氧化层厚度的增加而系统地降低。本研究的目的是在较宽的厚度范围(3-20 nm)内,通过实验建立p和n沟道器件的沟道迁移率与栅氧化层厚度之间的关系,以期开发出一套对未来器件模拟有用的经验公式。此外,还将系统地研究与超薄氧化物MOSFET MOS场效应管(FET)器件的加工相关的重要问题;其结果应与VLSI器件的实际小型化相关。
英文摘要
As the gate oxide thickness of a metal- oxide- semiconductor (MOS) transistor shrinks down to below 10nm, there is strong evidence that the carrier mobility in the conduction channel is reduced systematically with gate oxide thickness. The objective of the research is to experimentally establish the relationship between the channel mobility and the gate oxide thickness for both p and n channel devices over a wide range of thicknesses (3-20nm), with a goal toward the development of a set of empirical equations useful for future device simulations. In addition, important issues pertinent to the processing of very thin oxide MOSFET MOS field effect transistors (FET) devices will be systematically investigated; the results should be relevant to practical down- scaling of VLSI devices.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
A thorough Investigation of Negative Capacitance Model for Ferroelectric-Gated MOSFETs
  • 批准号:
    1941316
  • 项目类别:
    Standard Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    2020
  • 负责人:
    Tso-Ping Ma
  • 依托单位:
NSF/ENG/ECCS-BSF: Dynamically configurable memory technology based on ferroelectric-gated field effect transistors
  • 批准号:
    1609162
  • 项目类别:
    Standard Grant
  • 资助金额:
    $34.5万
  • 财政年份:
    2016
  • 负责人:
    Tso-Ping Ma
  • 依托单位:
Inelastic Electron Tunneling Spectroscopy Studies of Advanced Gate Dielectrics
  • 批准号:
    0096762
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $35.15万
  • 财政年份:
    2001
  • 负责人:
    Tso-Ping Ma
  • 依托单位:
Gate Dielectric for Scaled CMOS Technology
  • 批准号:
    9817869
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $18.0万
  • 财政年份:
    1999
  • 负责人:
    Tso-Ping Ma
  • 依托单位:
海外基金