Channel Mobility Degradation in Very Thin Gate Oxide MOSFETs

当金属氧化物半导体(MOS)晶体管的栅氧化层厚度减小到10 nm以下时，有强有力的证据表明，导通沟道中的载流子迁移率随栅氧化层厚度的增加而系统地降低。本研究的目的是在较宽的厚度范围(3-20 nm)内，通过实验建立p和n沟道器件的沟道迁移率与栅氧化层厚度之间的关系，以期开发出一套对未来器件模拟有用的经验公式。此外，还将系统地研究与超薄氧化物MOSFET MOS场效应管(FET)器件的加工相关的重要问题；其结果应与VLSI器件的实际小型化相关。

As the gate oxide thickness of a metal- oxide- semiconductor (MOS) transistor shrinks down to below 10nm, there is strong evidence that the carrier mobility in the conduction channel is reduced systematically with gate oxide thickness. The objective of the research is to experimentally establish the relationship between the channel mobility and the gate oxide thickness for both p and n channel devices over a wide range of thicknesses (3-20nm), with a goal toward the development of a set of empirical equations useful for future device simulations. In addition, important issues pertinent to the processing of very thin oxide MOSFET MOS field effect transistors (FET) devices will be systematically investigated; the results should be relevant to practical down- scaling of VLSI devices.