Channel Mobility Degradation in Very Thin Gate Oxide MOSFETs

当金属氧化物半导体（MOS）晶体管的栅极氧化物厚度减小到10nm以下时，有强有力的证据表明，导电通道中的载流子迁移率随着栅极氧化物厚度的增加而系统地降低。该研究的目的是通过实验建立在宽厚度范围内（3-20nm） p和n通道器件的通道迁移率和栅极氧化物厚度之间的关系，目标是开发一套对未来器件模拟有用的经验方程。此外，还将系统地研究与极薄氧化MOSFET MOS场效应晶体管（FET）器件加工有关的重要问题；研究结果对超大规模集成电路器件的实际小型化具有重要意义。

As the gate oxide thickness of a metal- oxide- semiconductor (MOS) transistor shrinks down to below 10nm, there is strong evidence that the carrier mobility in the conduction channel is reduced systematically with gate oxide thickness. The objective of the research is to experimentally establish the relationship between the channel mobility and the gate oxide thickness for both p and n channel devices over a wide range of thicknesses (3-20nm), with a goal toward the development of a set of empirical equations useful for future device simulations. In addition, important issues pertinent to the processing of very thin oxide MOSFET MOS field effect transistors (FET) devices will be systematically investigated; the results should be relevant to practical down- scaling of VLSI devices.