Channel Mobility Degradation in Very Thin Gate Oxide MOSFETs

作为金属氧化物半导体（MOS）的栅极氧化物厚度， 晶体管缩小到10纳米以下，有强有力的证据表明， 降低了导电沟道中的载流子迁移率 系统地与栅极氧化物厚度相关。 的目的 研究的目的是通过实验建立 沟道迁移率和p沟道和n沟道的栅氧化层厚度 器件的厚度范围很宽（3- 20 nm），目标是 开发一套对未来有用的经验公式 设备模拟。 此外，与《公约》有关的重要问题 极薄氧化物MOSFET MOS场效应晶体管（FET）的处理 将对器械进行系统研究;结果应 这与实际的VLSI器件的缩小尺寸有关。

As the gate oxide thickness of a metal- oxide- semiconductor (MOS) transistor shrinks down to below 10nm, there is strong evidence that the carrier mobility in the conduction channel is reduced systematically with gate oxide thickness. The objective of the research is to experimentally establish the relationship between the channel mobility and the gate oxide thickness for both p and n channel devices over a wide range of thicknesses (3-20nm), with a goal toward the development of a set of empirical equations useful for future device simulations. In addition, important issues pertinent to the processing of very thin oxide MOSFET MOS field effect transistors (FET) devices will be systematically investigated; the results should be relevant to practical down- scaling of VLSI devices.