A thorough Investigation of Negative Capacitance Model for Ferroelectric-Gated MOSFETs

项目名称：负电容：摘要“负电容”（NC）的概念最近被提出，是过去十年左右半导体界出现的最新颖、最令人兴奋的想法之一，因为它有望使场效应晶体管（FET）集成电路（ic）的运行速度超过传统理论预测的极限。即使降低了能耗。因此，自NC晶体管问世以来，世界各地的许多研究人员和工程师一直在积极研究其各个方面，从而产生了许多具有不同程度质量和灵敏度的出版物。这些研究报告引起了广泛的混淆和相互矛盾的结论。本研究的目的是通过对该主题的各个方面进行深入研究，全面了解铁电门控场效应管的NC模型，并广泛传播研究结果，以促进其在半导体界的健康发展。技术摘要：为了实现这一目标，将对已发表的文献进行详尽的研究，以彻底研究铁电门控场效应晶体管（fefet）负电容模型的理论和实验方面，以识别和阐明有效和错误的主张。许多巧妙构造的实验被提出，以证实或揭穿流行的场效应管的NC模型，并令人信服地揭露错误的主张，因为他们的潜在原因的揭示支持。这个项目的知识意义源于这样一个事实，即它解决了一个既具有强烈的科学兴趣又具有重大技术重要性的问题。在科学方面，NC模型是过去十年左右最引人注目的想法之一，它在全球半导体社区产生了浓厚的兴趣。在技术方面，与fefet相关的NC有望在基于摩尔定律的传统缩放接近尾声时提供非常低的亚阈值摆动解决方案。本研究结果旨在为下一代集成电路中效应场效应管的负电容研究提供重要和公正的参考，如果不是关键参考。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

PROJECT ABSTRACTProposal Title:Negative Capacitance: Scientific Facts or Fiction - A Thorough Examination of Ferroelectric-Gated Field-Effect Transistor ModelsNontechnical AbstractThe concept of “negative capacitance” (NC), recently brought to light, is one of the most novel and exciting ideas that emerged in the last decade or so in the semiconductor community, as it promises to enable field-effect transistor (FET) integrated circuits (ICs) to perform at speeds exceeding the limit predicted by the conventional theory, even with reduced power consumption. Consequently, many researchers and engineers throughout the world have been actively working on various aspects of NC transistors since its introduction, resulting in numerous publications with varying degrees of quality and sensibility. The research reports have caused wide spread confusion and conflicting conclusions. The objective of this research is to obtain a comprehensive understanding of the NC model of ferroelectric-gated FETs by conducting a thorough investigation of all aspects of this topic, and to disseminate widely the findings with a goal to foster its healthy development in the semiconductor community.Technical AbstractTo achieve this objective, an exhaustive study of the published literature will be made to thoroughly investigate both theoretical and experimental aspects of negative capacitance models of ferroelectric-gated field-effect transistors (FeFETs) in order to identify and to articulate valid as well as false claims. Many cleverly constructed experiments are proposed to confirm or debunk the prevailing NC models of FeFETs, and to convincingly expose the false claims as supported by the revelation of their underlying causes.The intellectual significance of this project stems from the fact that it addresses an issue of both intense scientific interest and significant technological importance. On the scientific side, the NC model is one of the most striking ideas in the last decade or so, which have generated intense interests in the semiconductor community worldwide. On the technological side, the NC associated with FeFETs promises to provide a very low subthreshold-swing solution just when the conventional scaling based on the Moore’s Law is nearing its end. The findings of this study are intended to provide an important and unbiased reference, if not the key reference, for the study of the negative capacitance in the context of FeFETs for next-generation integrated circuits.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.