A thorough Investigation of Negative Capacitance Model for Ferroelectric-Gated MOSFETs

项目摘要建议标题：负电容：科学事实或虚构-铁电门控场效应管模型的彻底检查非技术摘要最近被曝光的“负电容”(NC)的概念是在过去十年左右的半导体界中出现的最新颖和最令人兴奋的想法之一，因为它有望使场效应管(FET)集成电路(IC)以超过传统理论预测的速度运行，即使在降低功耗的情况下也是如此。因此，自从NC晶体管问世以来，世界各地的许多研究人员和工程师一直在积极地研究它的各个方面，从而产生了许多质量和敏感性不同的出版物。这些研究报告造成了广泛的混乱和相互矛盾的结论。本研究的目的是通过对本课题各个方面的深入研究，对铁电门控FET的NC模型有一个全面的了解，并广泛传播这些发现，以促进其在半导体界的健康发展。技术摘要为了实现这一目标，将对已发表的文献进行详尽的研究，从理论和实验两个方面深入研究铁电门控FET的负电容模型，以便识别和阐明正确和错误的说法。许多设计巧妙的实验被提出来证实或揭穿流行的FeFET的NC模型，并令人信服地揭露其根本原因所支持的错误主张。该项目的智力意义源于它解决了一个具有强烈科学兴趣和重大技术重要性的问题。在科学方面，NC模型是过去十年左右最引人注目的想法之一，在世界各地的半导体界引起了强烈的兴趣。在技术方面，与FeFET相关的NC承诺在基于摩尔定律的传统缩放接近尾声时提供非常低的亚阈值摆动解决方案。这项研究的结果旨在为研究下一代集成电路FeFET中的负电容提供重要和公正的参考，如果不是关键参考。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

PROJECT ABSTRACTProposal Title:Negative Capacitance: Scientific Facts or Fiction - A Thorough Examination of Ferroelectric-Gated Field-Effect Transistor ModelsNontechnical AbstractThe concept of “negative capacitance” (NC), recently brought to light, is one of the most novel and exciting ideas that emerged in the last decade or so in the semiconductor community, as it promises to enable field-effect transistor (FET) integrated circuits (ICs) to perform at speeds exceeding the limit predicted by the conventional theory, even with reduced power consumption. Consequently, many researchers and engineers throughout the world have been actively working on various aspects of NC transistors since its introduction, resulting in numerous publications with varying degrees of quality and sensibility. The research reports have caused wide spread confusion and conflicting conclusions. The objective of this research is to obtain a comprehensive understanding of the NC model of ferroelectric-gated FETs by conducting a thorough investigation of all aspects of this topic, and to disseminate widely the findings with a goal to foster its healthy development in the semiconductor community.Technical AbstractTo achieve this objective, an exhaustive study of the published literature will be made to thoroughly investigate both theoretical and experimental aspects of negative capacitance models of ferroelectric-gated field-effect transistors (FeFETs) in order to identify and to articulate valid as well as false claims. Many cleverly constructed experiments are proposed to confirm or debunk the prevailing NC models of FeFETs, and to convincingly expose the false claims as supported by the revelation of their underlying causes.The intellectual significance of this project stems from the fact that it addresses an issue of both intense scientific interest and significant technological importance. On the scientific side, the NC model is one of the most striking ideas in the last decade or so, which have generated intense interests in the semiconductor community worldwide. On the technological side, the NC associated with FeFETs promises to provide a very low subthreshold-swing solution just when the conventional scaling based on the Moore’s Law is nearing its end. The findings of this study are intended to provide an important and unbiased reference, if not the key reference, for the study of the negative capacitance in the context of FeFETs for next-generation integrated circuits.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.