Jet Vapor Deposited Silicon Nitride Films for ULSI Applications

用于 ULSI 应用的喷射气相沉积氮化硅薄膜

• 批准号: 9520430
• 负责人: Tso-Ping Ma
• 金额: $ 25万
• 依托单位: Yale University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9520430&HistoricalAwards=false
• 关键词: Jet; Vapor; Deposited; Silicon; Nitride

9520430 Ma The proposal concentrates on the synthesis, characterization and application of the Jet-Vapor Deposited (JVD) silicon nitride film for an advanced gate dielectric in scale MOS transistors for future generations of integrated circuits. The current dielectric, SiO2, has served the semiconductor device community well in scaling channel lengths; however, as feature sizes move to submicron and nanometric dimensions there is a genuine concern about the need to address reliability issues associated with dielectric films. A JVD process which uses a supersonic jet of helium carrier gas to transport vapor from the source to the substrate and because of the very short transit times there is little opportunity of gas-phase nucleation to take place in the deposition process. These films show merit for advanced gate dielectrics for scaled MOS devices, storage capacitors for high-density DRAMS, and interpoly dielectrics for EEPROMs. ***

9520430 Ma该提案集中在喷射气相沉积（JVD）氮化硅膜的合成，表征和应用，用于未来几代集成电路的大规模MOS晶体管中的先进栅极电介质。 目前的电介质，SiO2，已经很好地服务于半导体器件社区在缩放沟道长度;然而，随着特征尺寸移动到亚微米和纳米尺寸，有一个真正的关注需要解决与电介质膜相关的可靠性问题。 一种JVD工艺，其使用氦载气的超音速射流将蒸汽从源输送到衬底，并且由于非常短的输送时间，在沉积工艺中几乎没有发生气相成核的机会。 这些薄膜显示出先进的栅电容器的缩放MOS器件，存储电容器的高密度DRAM，和电可擦除可编程只读存储器的interpoly的优点。 ***