Jet Vapor Deposited Silicon Nitride Films for ULSI Applications

9520430 Ma该提案集中在喷射气相沉积（JVD）氮化硅膜的合成，表征和应用，用于未来几代集成电路的大规模MOS晶体管中的先进栅极电介质。 当前的电介质SiO2在缩小沟道长度方面为半导体器件界提供了良好的服务;然而，随着特征尺寸向亚微米和纳米尺寸发展，人们真正担心需要解决与电介质薄膜相关的可靠性问题。 一种JVD工艺，其使用氦载气的超音速射流将蒸汽从源输送到衬底，并且由于非常短的输送时间，在沉积工艺中几乎没有发生气相成核的机会。 这些薄膜显示出先进的栅电容器的缩放MOS器件，存储电容器的高密度DRAM，和电可擦除可编程只读存储器的interpoly的优点。 ***

9520430 Ma The proposal concentrates on the synthesis, characterization and application of the Jet-Vapor Deposited (JVD) silicon nitride film for an advanced gate dielectric in scale MOS transistors for future generations of integrated circuits. The current dielectric, SiO2, has served the semiconductor device community well in scaling channel lengths; however, as feature sizes move to submicron and nanometric dimensions there is a genuine concern about the need to address reliability issues associated with dielectric films. A JVD process which uses a supersonic jet of helium carrier gas to transport vapor from the source to the substrate and because of the very short transit times there is little opportunity of gas-phase nucleation to take place in the deposition process. These films show merit for advanced gate dielectrics for scaled MOS devices, storage capacitors for high-density DRAMS, and interpoly dielectrics for EEPROMs. ***