Jet Vapor Deposited Silicon Nitride Films for ULSI Applications

本课题主要研究喷气气相沉积（JVD）氮化硅薄膜的合成、表征和应用，该薄膜可用于未来几代集成电路的先进栅极介电晶体管。目前的介电材料SiO2在半导体器件界很好地调节了通道长度；然而，随着特征尺寸向亚微米和纳米尺寸移动，人们真正关心的是需要解决与介电膜相关的可靠性问题。一种利用氦载气的超音速射流将蒸汽从源输送到衬底的JVD工艺，由于传输时间很短，在沉积过程中几乎没有发生气相成核的机会。这些薄膜显示出用于规模化MOS器件的先进栅极介质、用于高密度dram的存储电容器和用于eeprom的内插介质的优点。＊＊＊

9520430 Ma The proposal concentrates on the synthesis, characterization and application of the Jet-Vapor Deposited (JVD) silicon nitride film for an advanced gate dielectric in scale MOS transistors for future generations of integrated circuits. The current dielectric, SiO2, has served the semiconductor device community well in scaling channel lengths; however, as feature sizes move to submicron and nanometric dimensions there is a genuine concern about the need to address reliability issues associated with dielectric films. A JVD process which uses a supersonic jet of helium carrier gas to transport vapor from the source to the substrate and because of the very short transit times there is little opportunity of gas-phase nucleation to take place in the deposition process. These films show merit for advanced gate dielectrics for scaled MOS devices, storage capacitors for high-density DRAMS, and interpoly dielectrics for EEPROMs. ***