IUC: A Study of the Basic Characteristics of Submicron Gate-length Superlattice Stabilized Modulation-doped FET's Optimized for Improved MM-wave Performance

这个产业/大学合作研究计划关注的是 理解和改进各种结构和 材料效应决定调制掺杂的性能 场效应管的热稳定性和毫米波功率 收益. 对于热稳定性，GaAs上的常规n-AlGaAs层 缓冲层将由短周期n-GaAs/AlAs替代 超晶格 这种配置将用于实现亚微米 具有优化的栅极层厚度的栅极长度MODFET， 毫米波频率下的器件功率增益稳定裕度。 额外 设计改进将被纳入，以减少设备输出 电导和接触串联电阻。 详细的电气 改进的MODFET的表征和建模，首先， 支持结构设计优化过程，然后提取 基本的电气和物理参数，指示 将对优化器械进行HF电位测试。

This industry/university cooperative research program is concerned with an understanding and improvement of the various structural and materials effects determining the performance of the modulation-doped FET's including their thermal stability and millimeter-wave power gains. For thermal stability, the conventional n-AlGaAs layer on GaAs buffer layer will be replaced by a short period n-GaAs/AlAs superlattice. This configuration will be used to achieve submicron gate-length MODFET's with optimized gate layer thickness to improve the device power gain stability margin at mm-wave frequencies. Additional design refinements will be incorporated to reduce the device output conductance and contact series resistances. Detailed electrical characterization and modeling of the improved MODFET's, first to support the structural design optimization process and then to extract the basic electrical and physical parameters that are indicative of the HF potential of the optimized devices will be performed.