IUC: A Study of the Basic Characteristics of Submicron Gate-length Superlattice Stabilized Modulation-doped FET's Optimized for Improved MM-wave Performance

该行业/大学合作研究项目致力于了解和改进决定调制掺杂FET性能的各种结构和材料效应，包括它们的热稳定性和毫米波功率增益。在热稳定性方面，用短周期的n-GaAs/AlAs超晶格取代了传统的n-AlGaAs缓冲层。这种结构将用于实现具有优化栅层厚度的亚微米栅长MODFET，以提高器件在毫米波频率下的功率增益稳定裕度。将采用额外的设计改进，以降低器件的输出电导和触点串联电阻。将对改进的MODFET进行详细的电学表征和建模，首先支持结构设计优化过程，然后提取指示优化器件高频电势的基本电学和物理参数。

This industry/university cooperative research program is concerned with an understanding and improvement of the various structural and materials effects determining the performance of the modulation-doped FET's including their thermal stability and millimeter-wave power gains. For thermal stability, the conventional n-AlGaAs layer on GaAs buffer layer will be replaced by a short period n-GaAs/AlAs superlattice. This configuration will be used to achieve submicron gate-length MODFET's with optimized gate layer thickness to improve the device power gain stability margin at mm-wave frequencies. Additional design refinements will be incorporated to reduce the device output conductance and contact series resistances. Detailed electrical characterization and modeling of the improved MODFET's, first to support the structural design optimization process and then to extract the basic electrical and physical parameters that are indicative of the HF potential of the optimized devices will be performed.