IUC: A Study of the Basic Characteristics of Submicron Gate-length Superlattice Stabilized Modulation-doped FET's Optimized for Improved MM-wave Performance

IUC：亚微米栅长超晶格稳定调制掺杂 FET 基本特性的研究，经优化可提高毫米波性能

• 批准号: 8503894
• 负责人: Mukunda Das
• 金额: $ 17.05万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-07-01 至 1988-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8503894&HistoricalAwards=false
• 关键词: IUC; Study; Basic; Characteristics; Submicron

This industry/university cooperative research program is concerned with an understanding and improvement of the various structural and materials effects determining the performance of the modulation-doped FET's including their thermal stability and millimeter-wave power gains. For thermal stability, the conventional n-AlGaAs layer on GaAs buffer layer will be replaced by a short period n-GaAs/AlAs superlattice. This configuration will be used to achieve submicron gate-length MODFET's with optimized gate layer thickness to improve the device power gain stability margin at mm-wave frequencies. Additional design refinements will be incorporated to reduce the device output conductance and contact series resistances. Detailed electrical characterization and modeling of the improved MODFET's, first to support the structural design optimization process and then to extract the basic electrical and physical parameters that are indicative of the HF potential of the optimized devices will be performed.

这个工业/大学合作研究项目关注于理解和改进各种结构和材料效应，这些效应决定了调制掺杂FET的性能，包括它们的热稳定性和毫米波功率增益。为了提高热稳定性，将GaAs缓冲层上的传统n-AlGaAs层替换为短周期n-GaAs/AlAs超晶格。该结构将用于实现具有优化栅极层厚度的亚微米栅极长度MODFET，以提高器件在毫米波频率下的功率增益稳定裕度。将采用额外的设计改进来降低器件输出电导和接触串联电阻。对改进后的MODFET进行详细的电学表征和建模，首先支持结构设计优化过程，然后提取用于指示优化后器件高频电位的基本电学和物理参数。