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Expedited Award for Novel Research: Real Space Transfer Dual Switching Field Effect Transistors using III-V Modulation Doped Heterostructures

Expedited Award for Novel Research: Real Space Transfer Dual Switching Field Effect Transistors using III-V Modulation Doped Heterostructures
新颖研究加急奖：使用 III-V 调制掺杂异质结构的真实空间传输双开关场效应晶体管
批准号：
8617801
负责人：
Mukunda Das
金额：
$3.0万
依托单位：
Pennsylvania State Univ University Park
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
1986
资助国家：
美国
项目状态：
已结题
起止时间：
1986-09-15 至 1988-02-29
来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=8617801&HistoricalAwards=false
关键词：
ExpeditedAwardNovelResearchReal

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中文摘要
翻译
PI将与位于新泽西州蒙茅斯堡的电子技术和设备实验室（ETDL）开展合作研究活动，包括设计、制造、建模和表征一种新型的实时空间转移开关MODFET器件结构。测试装置结构的设计细节将由两个实验室共同开发。实际的设备制造工作将在ETDL进行，PSU的一名高级研究生将暂时留在蒙茅斯堡地区直接参与。
英文摘要
The PI will carry out collaborative research activities with the Electronics Technology and Devices Laboratory (ETDL) at Fort Monmouth, New Jersey involving the design, fabrication, modelling and characterization of a novel real-space transfer switching MODFET device structure. The design details of the test device structure will be jointly developed between the two laboratories. The actual device fabrication work will be carried out at the ETDL with direct participation of a senior graduate student from PSU who will stay in Fort Monmouth area on a temporary basis.
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会议论文
"Structural and Performance Limitations of Ultra-Submicron Gate-length Modulation-Doped FET's Based on InP Substrate for MM-Wave Amplification"
Fabrication and Characterization of Selectively Contacted Dual Channel Switching Transistors Using III-V Modulation- Doped Heterostructures - Ft. Monmouth
Design and Performance Evaluation of 0.1 um Gate-Length Modulation-Doped FET's for Millimeter-Wave Amplification
Fort Monmouth Interaction: Fabrication and Characterization of Real-Space Transfer Dual Switching Field-Effect Using III-V Modulation-Doped Heterostructures
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