Fort Monmouth Interaction: Fabrication and Characterization of Real-Space Transfer Dual Switching Field-Effect Using III-V Modulation-Doped Heterostructures

Fort Monmouth Interaction：使用 III-V 调制掺杂异质结构的真实空间传输双开关场效应的制造和表征

• 批准号: 8718801
• 负责人: Mukunda Das
• 金额: $ 3万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-05-15 至 1989-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8718801&HistoricalAwards=false
• 关键词: Fort; Monmouth; Interaction; Fabrication; Characterization

This research proposal is concerned with the device design, device material optimization, and fabrication and characterization of a novel FET structure based on real-space transfer of 2-D electrons within a quantum well. The research will be carried out under mutually agreed collaborative arrangements between the PSU Center for Electronic Materials and Devices (CEMD), and the Electronic Technology and Devices Laboratory (ETDL), US Army Research and Development Command, Ft. Monmouth, NJ. This effort will be under the newly established NSF and US Army Joint Research Program involving universities and US Army Research Laboratories. A PSU graduate assistant working under the principal investigator will be given access to the extensive microelectronics facilities that exist at the ETDL where device grade materials growth and processing for device fabrication will be carried out jointly by him and the ETDL technical and scientific staff. The research effort will involve optimization of the MBE-grown AlGaAs/GaAs heterostructure III-V material for the proposed real-space transfer FET structure, fabrication of the test device structures, their electrical characterization for determination of performance limitation, and interpretations of measured characteristics through theoretical modeling. The first year study will be conducted based on a test structure that has evolved as a result of a one-year NSF grant under its "Expedited Award for Novel Concepts" program. The results of the first year study will be translated into an improved version of the novel device structure and its characteristics will be investigated. The emphasis of this study will be on the practical usefulness of the fabricated test device structures in high speed III- V switching integrated circuits.

本研究计划涉及器件设计，器件材料优化，以及基于量子阱内二维电子实空间转移的新型场效应管结构的制造和表征。该研究将在PSU电子材料与器件中心（CEMD）和电子技术与器件实验室（ETDL）、美国陆军研究与发展司令部（位于新泽西州蒙茅斯堡）之间相互同意的合作安排下进行。这项工作将在新成立的国家科学基金会和美国陆军联合研究计划下进行，涉及大学和美国陆军研究实验室。在首席研究员手下工作的一名PSU研究生助理将被允许使用ETDL中存在的广泛的微电子设备，在那里，设备级材料的生长和设备制造的加工将由他和ETDL的技术和科学人员共同进行。研究工作将涉及mbe生长的AlGaAs/GaAs异质结构III-V材料的优化，用于提出的实空间转移FET结构，测试器件结构的制造，其电气特性以确定性能限制，并通过理论建模解释测量特性。第一年的研究将基于一种测试结构进行，该测试结构是由美国国家科学基金会在其“新概念加速奖”计划下的一年拨款发展而来的。第一年的研究结果将转化为新器件结构的改进版本，并将研究其特性。本研究的重点将放在制作的测试装置结构在高速III- V开关集成电路中的实际用途上。