Fort Monmouth Interaction: Fabrication and Characterization of Real-Space Transfer Dual Switching Field-Effect Using III-V Modulation-Doped Heterostructures

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This research proposal is concerned with the device design, device material optimization, and fabrication and characterization of a novel FET structure based on real-space transfer of 2-D electrons within a quantum well. The research will be carried out under mutually agreed collaborative arrangements between the PSU Center for Electronic Materials and Devices (CEMD), and the Electronic Technology and Devices Laboratory (ETDL), US Army Research and Development Command, Ft. Monmouth, NJ. This effort will be under the newly established NSF and US Army Joint Research Program involving universities and US Army Research Laboratories. A PSU graduate assistant working under the principal investigator will be given access to the extensive microelectronics facilities that exist at the ETDL where device grade materials growth and processing for device fabrication will be carried out jointly by him and the ETDL technical and scientific staff. The research effort will involve optimization of the MBE-grown AlGaAs/GaAs heterostructure III-V material for the proposed real-space transfer FET structure, fabrication of the test device structures, their electrical characterization for determination of performance limitation, and interpretations of measured characteristics through theoretical modeling. The first year study will be conducted based on a test structure that has evolved as a result of a one-year NSF grant under its "Expedited Award for Novel Concepts" program. The results of the first year study will be translated into an improved version of the novel device structure and its characteristics will be investigated. The emphasis of this study will be on the practical usefulness of the fabricated test device structures in high speed III- V switching integrated circuits.