Design and Performance Evaluation of 0.1 um Gate-Length Modulation-Doped FET's for Millimeter-Wave Amplification

用于毫米波放大的 0.1 um 栅极长度调制掺杂 FET 的设计和性能评估

• 批准号: 8714972
• 负责人: Mukunda Das
• 金额: $ 21.79万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-04-01 至 1990-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8714972&HistoricalAwards=false
• 关键词: Design; Performance; Evaluation; 0.1; um

This research is concerned with the design and realization of 0.1 Um gate-length modulation-doped field-effect transistors (MODFET's) for signal amplification above 100 GHz. The research to be carried out at PSU will involve device structural design dictated by the desired mm- wave performance, and electrical measurements and characterization of completed devices. The task of device fabrication will be undertaken by the G.E. Electronics Laboratory, Syracuse, NY, and test samples will be made available to the PI for studies at no additional costs to NSF. The research would examine the quality of the pseudomorphic InGaAs, and the associated heterostructure layers in the proposed n- AlGaAs/InGaAs/GaAs MODFET structure. A low Al-molefraction in the Si- doped AlGaAs has been very effective in reducing the deep DX centers that usually cause the well known I-V collapse in the conventional n- AlGaAs/GaAs MODFET's. The high performance of the 0.25 Um gate-length pseudomorphic MODFET's studied under the current project has been main motivation to the proposed 0.1 Um gate-length MODFET structure which is expected to provide useful power gain in the 100 to 200 GHz range. The proposed research recognized the importance of optimized materials growth for the desired MODFET structure, and a thorough investigation of the material and device electrical properties in order to achieve a better understanding of the device operation.

本研究的目的是设计和实现用于100ghz以上信号放大的0.1 Um门长调制掺杂场效应晶体管（MODFET's）。在PSU进行的研究将包括由期望的毫米波性能决定的器件结构设计，以及完成器件的电气测量和特性。设备制造的任务将由位于纽约州锡拉丘兹的ge电子实验室承担，测试样品将提供给PI用于研究，不需要NSF支付额外费用。本研究将检测拟晶InGaAs的质量，以及所提出的n- AlGaAs/InGaAs/GaAs MODFET结构中相关的异质结构层。在Si掺杂的AlGaAs中，低al分子非常有效地减少了深DX中心，而深DX中心通常会导致传统n- AlGaAs/GaAs MODFET中众所周知的I-V崩溃。当前项目研究的0.25 Um门长伪晶MODFET的高性能是提出0.1 Um门长MODFET结构的主要动力，该结构有望在100至200 GHz范围内提供有用的功率增益。提出的研究认识到优化材料生长对于期望的MODFET结构的重要性，以及对材料和器件电性能的彻底调查，以便更好地理解器件的操作。