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Fabrication and Characterization of Selectively Contacted Dual Channel Switching Transistors Using III-V Modulation- Doped Heterostructures - Ft. Monmouth

使用 III-V 调制掺杂异质结构的选择性接触双通道开关晶体管的制造和表征 - Ft.

基本信息

批准号：
8913743
负责人：
Mukunda Das
金额：
$ 1.7万
依托单位：
Pennsylvania State Univ University Park
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
1989
资助国家：
美国
起止时间：
1989-08-15 至 1991-01-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=8913743&HistoricalAwards=false
关键词：
Fabrication Characterization Selectively Contacted Dual

项目摘要

This research proposal is concerned with the MBE-growth of III-V heterostructure material, and fabrication and characterization of a novel selectively contacted dual channel modulation-doped field-effect transistor based on the same material. The research will be carried out under a collaborative arrangement between the PSU Center for Electronic Materials and Processing (CEMP), and the Electronic Technology and Devices Laboratory (ETDL), U.S. Army Electronics Research and Development Command, Fort Monmouth, NJ. This effort will be the third year of continuation of this project under the joint NSF and U.S. Army Research Program. A PSU senior graduate student working under the PI will continue to utilize the extensive microelectronics facilities at the ETDL in collaboration with its technical staff for the fabrication of the identified test device structures. The research efforts will involve optimization of the AlGaAs/GaAs heterostructure layer growth, wafer fabrication of this new test device structures, and their electrical characterization. The aim is to determine the mechanism of operation and performance limitations of this new device as a novel switching component, and expand the basic understanding concerning 2-D carrier transport within a heterostructure quantum well both in laterl and vertical directions.

这项研究计划涉及III-V族的MBE生长异质结构材料以及异质结构材料制备和表征新型选择性接触双沟道调制掺杂场效应晶体管基于相同的材料。这项研究将在根据PSU中心与电子材料和加工（CEMP），以及电子美国陆军电子技术与设备实验室（ETDL）新泽西州蒙茅斯堡研发司令部。这一努力将这是该项目在联合NSF下继续进行的第三年美国陆军研究计划。一个PSU的高级研究生工作在PI下，将继续利用广泛的微电子技术，与其技术人员合作，所识别的测试器件结构的制造。研究工作将涉及AlGaAs/GaAs的优化异质结层生长、晶片制造这一新的考验器件结构及其电特性。目的是确定的运作机制和性能限制，这种新器件作为一种新型的开关元件，关于二维载流子输运的理解横向和纵向异质结构量子阱。