Fabrication and Characterization of Selectively Contacted Dual Channel Switching Transistors Using III-V Modulation- Doped Heterostructures - Ft. Monmouth

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This research proposal is concerned with the MBE-growth of III-V heterostructure material, and fabrication and characterization of a novel selectively contacted dual channel modulation-doped field-effect transistor based on the same material. The research will be carried out under a collaborative arrangement between the PSU Center for Electronic Materials and Processing (CEMP), and the Electronic Technology and Devices Laboratory (ETDL), U.S. Army Electronics Research and Development Command, Fort Monmouth, NJ. This effort will be the third year of continuation of this project under the joint NSF and U.S. Army Research Program. A PSU senior graduate student working under the PI will continue to utilize the extensive microelectronics facilities at the ETDL in collaboration with its technical staff for the fabrication of the identified test device structures. The research efforts will involve optimization of the AlGaAs/GaAs heterostructure layer growth, wafer fabrication of this new test device structures, and their electrical characterization. The aim is to determine the mechanism of operation and performance limitations of this new device as a novel switching component, and expand the basic understanding concerning 2-D carrier transport within a heterostructure quantum well both in laterl and vertical directions.