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Industry/University Cooperative Research Activity: An Investigation of the Backgating Effect and the 1/f Noise in GaAs MESFET'S

Industry/University Cooperative Research Activity: An Investigation of the Backgating Effect and the 1/f Noise in GaAs MESFET'S
产学合作研究活动:GaAs MESFET 中的背栅效应和 1/f 噪声的研究
批准号:
8401182
负责人:
Mukunda Das
金额:
$4.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1984
资助国家:
美国
项目状态:
已结题
起止时间:
1984-08-01 至 1985-07-31

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