Engineering Research Equipment Grant: Rapid Thermal Annealing Facility
Engineering Research Equipment Grant: Rapid Thermal Annealing Facility
批准号:
8505833
负责人:
Pallab Bhattacharya
金额:
$2.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1985
资助国家:
美国
项目状态:
已结题
起止时间:
1985-08-01 至 1986-07-31
中文摘要
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英文摘要
Short-term annealing of implanted semiconductors using incoherent light sources is currently being widely used. This research is concerned with the establishment of a halogen lamp rapid thermal annealing system. The system will be used in ongoing experiments aimed at the understanding of the basic process and its optimization and in device fabrication. The latter includes both microwave and optoelectronic devices. The availability of such a system in the laboratory will enable more extensive studies in the various areas.
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依托单位:
国内基金
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