Optical Studies of Heterostructure Semiconductor Materials and Devices
Optical Studies of Heterostructure Semiconductor Materials and Devices
批准号:
8610803
负责人:
Pallab Bhattacharya
金额:
$63.53万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1986
资助国家:
美国
项目状态:
已结题
起止时间:
1986-09-15 至 1989-12-31
中文摘要
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英文摘要
This research effort includes thrusts in optical communications, switching, signal processing, and the new area of associative memory devices. The fundamental material questions which this work addresses are at the basis of the further development of the field. In addition, the necessary basic understanding and methods of probing some of the properties of such artificially produced structures in reliable way need proper addressing.
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依托单位:
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A Study of Rare-Earth Doped Semiconductors and Novel Laser Structures
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依托单位:
Engineering Research Equipment Grant: Rapid Thermal Annealing Facility
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依托单位:
A Study of Ion Implanted Compound Semiconductor Materials and Devices Activated by Rapid Thermal Annealing
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财政年份:1984
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依托单位:
海外基金