New Routes to Thin Films of Metal Nitrides

该项目属于材料化学领域 倡议 调查人员将检查化学蒸汽 沉积Al，Ga，In，Mo， 和Nb。 不同于以往 路线，其中采用氮或氨作为来源的 氮，前体将利用活性氮 部分如叠氮化物。 例如，初步结果显示， 示出叠氮化二乙基铝沉积氮化铝 薄膜在400摄氏度。 这意味着这些物种 将导致氮化物膜在较低的温度下， 更大的选择性，他们的计划包括使用 激光和等离子体诱导沉积沿着热 激活过程。 结构之间的关系 前体以及膜的结构和性能将 详细探讨。 一个特别设计的反应堆将 用于检测气相中的活性中间体（按质量计） 光谱法 这些研究沿着对 总的沉积速率将使我们更好地了解 反应机理和反应过程之间的关系 薄膜的性质。

This project is in the area of the Materials Chemistry Initiative. The investigators will examine the chemical vapor deposition of thin films of metal nitrides of Al, Ga, In, Mo, and Nb using new organometallic precursors. Unlike previous routes, which employed Nitrogen or Ammonia as the source of the nitrogen, the precursors will make use of reactive nitrogen moieties such as azide. For instance, preliminary results have shown that diethylaluminum azide deposits an aluminum nitride thin film at 400 degrees C. It is intended that such species will lead to the nitride films at lower temperatures with greater selectivity, and their plans include the use of laser-and plasma-induced depositions along with the thermally activated processes. The relationship between the structure of the precursor and the structure and properties of the film will be explored in detail. A specially designed reactor will be used to detect reactive intermediates in the gas phase by mass spectrometry. These studies along with the evaluation of the overall rate of deposition will lead to a better understanding of the relationship between the mechanism of reaction and the properties of the thin film.