Exploring Precursor Chemistry and Materials Synthesis Using Combinatorial CVD

明尼苏达大学的Wayne Gladfelter因其通过组合型CVD方法探索前体化学和材料合成的研究而获得化学系的支持。Gladfelter教授将研究通过化学气相沉积制备的新型薄膜氧化物材料，这些材料作为微电子应用的高介电常数材料具有潜在的兴趣。他还将制备和研究新的前体化合物。本研究将发展CVD方法，通过平衡前驱体气体的流体动力学行为和沉积动力学来产生金属氧化物薄膜的组分扩散。组合CVD将用于使用几种不同的前驱体生产HfO2(SiO2)n等非晶态材料的薄膜，从而可以直接比较沉积化学对金属-氧化学计量学、晶体相和薄膜微观结构的影响。新型高介电常数材料在微电子领域的应用具有重要意义。场效应晶体管是逻辑电路和存储电路中的关键器件。成功替代二氧化硅作为场效应晶体管的栅极介电介质，将使器件尺寸缩小的趋势在未来几年继续下去。研究生、本科生和博士后将在无机材料化学项目中获得优秀的培训和研究经验。

Wayne Gladfelter of the University of Minnesota is supported by the Division of Chemistry for his research exploring precursor chemistry and materials synthesis by a combinatorial-type CVD approach. Prof. Gladfelter will investigate new thin-film oxide materials prepared by chemical vapor deposition that are of potential interest as higher dielectric constant materials for microelectronics applications. He will also prepare and study new precursor compounds. This research will develop CVD methods to produce compositional spreads of metal oxide films by balancing the fluid dynamic behavior of the precursor gases with the deposition kinetics. Combinatorial CVD will be used to produce films of amorphous materials such as HfO2(SiO2)n using several different precursors, allowing direct comparisons of the impact of deposition chemistry on metal-oxygen stoichiometry, crystallographic phase and film microstructure.New higher dielectric constant materials are of significant interest for microelectronics applications. Field effect transistors are critical components in logic and memory circuits. Successful replacement of SiO2 as the gate dielectric in field effect transistors will allow the trend in shrinking device size to continue for several years into the future. Graduate students, undergraduate students and postdocs will receive excellent training and research experiences in a forefront inorganic materials chemistry program.