Molecular Routes to Nanocrystalline GaN and GaN Films

明尼苏达大学的韦恩·格拉德费尔特获奖， 由化学先进材料计划和 材料研究部电子材料计划。的 研究的双重目标是开发新的前体， 氮化镓将允许较低的处理温度， 纳米晶体生长合成方案的发展 确定大小的颗粒。新的挥发性前体将基于 主要是氢化镓络合物和叠氮化有机镓。的 沉积的化学反应机制将使用薄膜进行检查 生长动力学和同位素标记。特定标签 前体与氘和同时分析的H和D使用 前向反冲弹性散射光谱法将允许 确定膜中氢结合的来源。一 一种新的链终止方法将被用来控制 使用已知的和新的氢化镓络合物测量颗粒尺寸。根据本 在这种方法中，非反应性链终止基团将涂覆在 颗粒上的镓和氮基团，并防止进一步 增长或聚集。 氮化镓是一种很有吸引力的光电器件 能够吸收或发射蓝光。这项研究将提供一个 氮化镓薄膜结构的演变图 时间、温度、压力和前驱体结构。通过关联 这些数据与沉积机制的研究，关键 生长化学与薄膜组成和结构之间的关系 将被制造。

This award to Wayne Gladfelter at the University of Minnesota is supported by the Advanced Materials Program in Chemistry and the Electronic Materials Program in the Division of Materials Research. The twofold goals of the research are the development of new precursors to gallium nitride which will permit lower processing temperatures, and the development of synthetic schemes for the growth of nanocystalline particles of defined size. New volatile precursors will be based primarily on gallium hydride complexes and organogallium azides. The chemical reaction mechanism of the deposition will be examined using film growth kinetics and isotopic labeling. Specific labeling of the precursors with deuterium and simultaneous profiling of H and D using forward recoil elastic scattering spectrometry will permit the determination of the source of hydrogen incorporation in the films. A novel chain-termination approach will be used to control nanocrystal particle size using known and new gallium hydride complexes. Under this approach, unreactive chain terminating groups will coat the surface of the gallium and nitrogen groups on the particles and prevent further growth or agglomeration. Gallium nitride is an attractive candidate for optoelectronic devices capable of absorbing or emitting blue light. This research will provide a picture of the evolution of gallium nitride film structure as a function of time, temperature, pressure and precursor structure. By correlating these data with studies of the deposition mechanism, the critical connection between growth chemistry and film composition and structure will be made.