RIA: InAsSb Material System for Infrared Detection

RIA：用于红外检测的 InAsSb 材料系统

• 批准号: 8908317
• 负责人: Gil Lee
• 金额: $ 6.89万
• 依托单位: Louisiana State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-08-15 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8908317&HistoricalAwards=false
• 关键词: RIA; InAsSb; Material; System; Infrared

This proposal is directed towards growth, characterization, and device fabrication of InAs1-xSbx grown on InSb substrates by molecular beam epitaxy (MBE). InAS1-xSbx alloys with x=0.6 offer an attractive alternative for detectors covering part of the 8-12um spectral range since InAs0.4Sb0.6 has the lowest band gap among the III-V compound semiconductors (Eg 0.1eV at room temperature). The detectors built from this InAsSb alloy have a cut-off wavelength of about 12um and 9um at room temperature and at 77K, respectively. In this work, further reduction in the band gap of InAs0.4Sb0.6 will be achieved utilizing a net tensile strain in a strained layer superlattice structure. A new superlattice structure will also be used as a buffer layer to eliminate defects resulting from lattice mismatch between different components.

本文介绍了分子束外延(MBE)在InSb衬底上生长InAs1-xSbx的生长、表征和器件制作。由于InAs0.4Sb0.6在III-V化合物半导体中具有最低的带隙(例如，室温下为0.1 eV)，x=0.6的InAs1-xSbx合金为覆盖部分8-12微米光谱范围的探测器提供了一个有吸引力的替代方案。用这种InAsSb合金制作的探测器在室温和77K时的截止波长分别约为12微米和9微米。在这项工作中，利用应变层超晶格结构中的净拉伸应变，将进一步减小InAs0.4Sb0.6的带隙。一种新的超晶格结构也将被用作缓冲层，以消除不同组件之间晶格失配造成的缺陷。