RIA: InAsSb Material System for Infrared Detection

该提案针对生长、表征和设备 InSb衬底上InAs_（1-x）Sb_x晶体的分子束生长 外延（MBE）。 InAS 1-xSbx合金（x = 0.6）具有吸引人的 覆盖部分8 - 12 um光谱范围的探测器的替代方案 由于InAs0.4Sb0.6在III-V族化合物中具有最低的带隙 半导体（例如，室温下为0.1eV）。 检测器 由这种InAsSb合金制成的具有约12 μ m的截止波长 在室温和77K下，其厚度分别为9um和9um。 在这 的工作，进一步降低InAs0.4Sb0.6的带隙将是 利用应变层中的净拉伸应变来实现 超晶格结构 一种新的超晶格结构也将在 用作缓冲层，以消除由晶格引起的缺陷 不同组件之间的不匹配。

This proposal is directed towards growth, characterization, and device fabrication of InAs1-xSbx grown on InSb substrates by molecular beam epitaxy (MBE). InAS1-xSbx alloys with x=0.6 offer an attractive alternative for detectors covering part of the 8-12um spectral range since InAs0.4Sb0.6 has the lowest band gap among the III-V compound semiconductors (Eg 0.1eV at room temperature). The detectors built from this InAsSb alloy have a cut-off wavelength of about 12um and 9um at room temperature and at 77K, respectively. In this work, further reduction in the band gap of InAs0.4Sb0.6 will be achieved utilizing a net tensile strain in a strained layer superlattice structure. A new superlattice structure will also be used as a buffer layer to eliminate defects resulting from lattice mismatch between different components.