Novel: "HEMT Compatible Laser Diodes"

小说：“HEMT 兼容激光二极管”

• 批准号: 8913337
• 负责人: Thomas Plant
• 金额: $ 2.99万
• 依托单位: Oregon State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-08-01 至 1991-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8913337&HistoricalAwards=false
• 关键词: Novel; HEMT; Compatible; Laser; Diodes

The PI will investigate a new, proprietary structure in the GaAs/A1GaAs material system which will allow laser diodes to be fabricated in HEMT (High Electron Mobility Transistor) material. This will allow easy integration of HEMT drive electronics with low capacitance, high speed laser diodes for future OEIC (Optoelectronic Integrated Circuit) applications. The process is based on the MBE growth technique of Plane Selective Doping which causes Si to incorporate as both p- and n-type dopant along different growth planes. This allows an abrupt lateral change from p- to n-type HEMT 2-d carrier layers, thus forming a pn junction. Very preliminary "proof of principle" work has yielded good pn junctions with spontaneous light emission at the GaAs bandgap wavelength but no lasing yet. The mask set proposed will contain single HEMT devices of both p- and n-type carriers, single laser structures of various active lengths for proper characterization, ohmic contact test structures to determine the contact resistance to the 2-d gases, and integrated laser/HEMT driver circuits. Ion-implanted contacts will be tried to reduce contact resistance, and TEM studies will be done of the pn junction to determine how abrupt it is.

PI将研究新的专有结构， GaAs/A1 GaAs材料系统，将允许激光二极管 采用HEMT（高电子迁移率晶体管）材料制造。 这 将允许容易地集成HEMT驱动电子器件， 电容，高速激光二极管，用于未来的OEIC（光电 集成电路）应用。 该过程基于MBE 平面选择性掺杂的生长技术， 沿着沿着不同生长引入p型和n型掺杂剂 飞机。 这允许从p型HEMT到n型HEMT的突然横向变化 2-D载流子层，从而形成pn结。 非常初步 “原理证明”工作已经产生了良好的pn结， 自发光发射在GaAs带隙波长，但没有 激光还没有。 所提出的掩模组将包含以下单个HEMT器件： p型和n型载流子，各种有源的单激光器结构， 适当表征的长度，欧姆接触测试结构， 确定对2-D气体的接触电阻， 激光器/HEMT驱动器电路。 离子注入接触将尝试 降低接触电阻，并对pn进行TEM研究 连接点以确定其突然程度。