SIMOX Structures for Optical Waveguides and Electro- Optic Devices in Silicon

单晶硅是一种用于1.3到1.6微米波长范围内的光波导的新材料。这一提议将推动硅导波光学技术，特别是硅光互连技术的发展。我们将研究一种新型的三维绝缘体上硅(SOI)导波结构，它将允许在大面积硅片内的两个堆叠级上进行光通信。要做到这一点，我们将使用多个氧离子注入基于斯派尔的独特经验，生产多级分离的氧离子注入(SIMOX)结构。此外，我们还将研究制造低损耗SOI波导和集成在SOI波导中的高速电光(EO)器件的方法。低损耗导光和实用光电器件是需要研究的两个关键领域，以确定硅是一种可行和有价值的光学材料。第二阶段工作的目标将是利用第一阶段的成果，在SOI中构建实用的高性能导波电光组件。将从第一阶段选出最适合的SIMOX结构。第二阶段的一些可能的方法是在SOI沟道波导上制作肖特基势垒或p-n结电极，以获得1.3微米波长的高性能光学相位调制器。

Crystalline silicon is a new material for optical waveguiding in the 1.3 to 1.6 micron wavelength range. This proposal will advance the state-of-the-art of silicon guided-wave optics, especially silicon optical interconnects. We shall investigate a novel, three- dimensional, silicon-on-insulator (SOI) guided-wave structure that will allow optical communications on two stacked levels within a large-area silicon wafer. To do this we shall use multiple implants of oxygen ions based on Spire's unique experience in producing multi- level Separation by Implantation of Oxygen (SIMOX) structures. In addition, we shall examine ways of fabricating low-loss SOI waveguides and high-speed electro-optic (EO) devices integrated in SOI waveguides. Low-loss guiding and practical EO components are two key areas that need to be researched to establish that silicon is a viable and valuable optical material. Goal of the Phase II work will be to exploit Phase I results to construct practical, high performance, guided-wave electro-optic components in SOI. The best-suited SIMOX structures from Phase I will be selected. Some possible approaches for Phase II are to fabricate Schottky-barrier or p-n junction electrodes on SOI channel waveguides to obtain high-performance optical phase modulators for the 1.3 micron wavelength.