Pulsed Electron-Beam-Generated Plasma Atomic-Layer Deposition (PEGPAD)

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Detailed plasma and surface modelling are combined with experiments to understand the fundamental and practical relationships between synthesis and material properties. Experiments involving 5-15 keV pulsed and/or continuous plasma sheets passing over a substrate at well controlled heights will be conducted to investigate the deposition of Si from silane for improved silicon film formation. By varying the pulse shape, beam height and process gas, the energy and type of species arriving at the substrate can be controlled, and hence resultant material properties as well. These studies are combined with modelling of plasma chemistry and surface kinetics to enable the structure and properties of the deposited materials to be predicted from arrival flux characteristics. %%% A new approach called pulsed electron beam generated plasma atomic layer deposition(PEGPAD) is proposed as a method to deposit improved semiconductor films. This innovative processing technique allows independent control of plasma generated species, their energy, and the substrate temaperature, yet is potentially scalable to industrial production levels.