Pulsed Electron-Beam-Generated Plasma Atomic-Layer Deposition (PEGPAD)

脉冲电子束等离子体原子层沉积 (PEGPAD)

• 批准号: 9201689
• 负责人: David Ruzic
• 金额: $ 27.5万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9201689&HistoricalAwards=false
• 关键词: Pulsed; Electron; Beam; Generated; Plasma

Detailed plasma and surface modelling are combined with experiments to understand the fundamental and practical relationships between synthesis and material properties. Experiments involving 5-15 keV pulsed and/or continuous plasma sheets passing over a substrate at well controlled heights will be conducted to investigate the deposition of Si from silane for improved silicon film formation. By varying the pulse shape, beam height and process gas, the energy and type of species arriving at the substrate can be controlled, and hence resultant material properties as well. These studies are combined with modelling of plasma chemistry and surface kinetics to enable the structure and properties of the deposited materials to be predicted from arrival flux characteristics. %%% A new approach called pulsed electron beam generated plasma atomic layer deposition(PEGPAD) is proposed as a method to deposit improved semiconductor films. This innovative processing technique allows independent control of plasma generated species, their energy, and the substrate temaperature, yet is potentially scalable to industrial production levels.

详细的等离子体和表面建模与实验相结合，以了解合成和材料特性之间的基本和实际关系。实验涉及5- 15kev脉冲和/或连续等离子体片在良好控制的高度上通过衬底，以研究硅烷中硅的沉积以改善硅膜的形成。通过改变脉冲形状、光束高度和工艺气体，可以控制到达基材的能量和物质类型，从而也可以控制所得材料的性能。这些研究与等离子体化学和表面动力学建模相结合，使沉积材料的结构和性能能够从到达通量特征中预测出来。提出了一种新的方法，称为脉冲电子束产生等离子体原子层沉积（PEGPAD），作为沉积改进半导体薄膜的方法。这种创新的处理技术可以独立控制等离子体产生的物质、能量和衬底温度，并且有可能扩展到工业生产水平。