Pulsed Electron-Beam-Generated Plasma Atomic-Layer Deposition (PEGPAD)

详细的等离子体和表面建模与实验相结合， 理解综合之间的基本和实际关系 和材料特性。 涉及5-15 keV脉冲和/或 连续等离子体片以良好的控制通过衬底 高度将进行调查的沉积硅从 用于改善硅膜形成的硅烷。 通过改变脉冲形状， 射束高度和工艺气体、能量和到达的物质类型 可以控制衬底，并因此控制所得材料性质 也 这些研究与等离子体化学建模相结合 和表面动力学，使结构和性能的 沉积的材料从到达通量特性预测。 %%% 脉冲电子束产生等离子体原子层的新方法 沉积（PEGPAD）被提出作为存款改进的 半导体薄膜 这种创新的加工技术允许 独立控制等离子体产生的物质、它们的能量以及 衬底温度，但潜在地可扩展到工业 生产水平。

Detailed plasma and surface modelling are combined with experiments to understand the fundamental and practical relationships between synthesis and material properties. Experiments involving 5-15 keV pulsed and/or continuous plasma sheets passing over a substrate at well controlled heights will be conducted to investigate the deposition of Si from silane for improved silicon film formation. By varying the pulse shape, beam height and process gas, the energy and type of species arriving at the substrate can be controlled, and hence resultant material properties as well. These studies are combined with modelling of plasma chemistry and surface kinetics to enable the structure and properties of the deposited materials to be predicted from arrival flux characteristics. %%% A new approach called pulsed electron beam generated plasma atomic layer deposition(PEGPAD) is proposed as a method to deposit improved semiconductor films. This innovative processing technique allows independent control of plasma generated species, their energy, and the substrate temaperature, yet is potentially scalable to industrial production levels.