Silicon Germanium Carbon Alloy Crystal Growth

外延生长的基础研究和外延生长的分析 SiGeC的性能将进行评估的可行性 通过结合1到2的SiGe获得应变补偿 原子百分比的碳进入CVD生长的SiGeC层，从而 提高能带隙。 在二元合金中， Si中约10原子百分比的Ge引入应变并降低了Si的应变。 相比之下，仅添加1%至2%的碳 在SiGe中，期望补偿应变并提高能量 间隙如果这是可行的，并且该材料是热稳定的， 在950 ℃的温度下，可以制造宽范围的 通过带隙工程的结构和先进设备 Si/SiGe/SiGeC异质结构类似于已经被 成功地证明了化合物半导体， 这是微电子学的一个重要进步。 %%% 本研究将探讨矽之磊晶成长 锗碳合金为了理解基本的材料性质， 并评估控制的能带隙的可能性， Si/SiGe/SiGeC异质结构， 各种先进的硅基器件。 三元合金， SiGeC，具有上级器件和电路的潜力 功能，同时简化流程集成。

A fundamental investigation of epitaxial growth and analysis of the properties of SiGeC will be conducted to assess the viability of obtaining strain compensation in SiGe by incorporation of 1 to 2 atomic percent carbon into CVD-grown layers of SiGeC, and thereby raise the energy band gap. In the binary alloy, the presence of about 10 atomic percent Ge in Si introduces strain and lowers the energy gap; in contrast, the addition of only 1 to 2 percent carbon in SiGe is expected to compensate the strain and raise the energy gap. If this is feasible, and the material is thermally stable to temperatures of 950C, it may be possible to fabricate a wide range of structures and advanced devices through band gap engineering of Si/SiGe/SiGeC heterostructures analogous to what has been successfully demonstrated with compound semiconductors, which would represent an important advance in microelectronics. %%% This research will investigate epitaxial crystal growth of silicon germanium carbon alloys to understand basic materials properties, and to assess the possibility of controlling the energy band gap of Si/SiGe/SiGeC heterostructures for utilization of this material in a wide range of advanced silicon-based devices. The ternary alloy, SiGeC, holds the potential of superior device and circuit capability while simplifying process integration.