Fundamental Studies of Ion Cutting

离子切割的基础研究

• 批准号: 0308127
• 负责人: James Mayer
• 金额: $ 57.34万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-06-01 至 2007-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0308127&HistoricalAwards=false
• 关键词: Fundamental; Studies; Ion; Cutting

This collaborative project between T.L. Alford and J.W. Mayer of Arizona State University (ASU) and S.S. Lau of the University of California, San Diego (UCSD) addresses fundamental aspects of ion-induced delamination of thin surface layers from Si and other semiconductors. The ion-cut process uses ion implanted gas atoms to promote splitting and transferring of a thin sur-face layer onto a different substrate. Although the ion-cut phenomenon is widely applied, little is known about many of the fundamental aspects of this process. It was not until very recently that the basic mechanics of the cutting process and the related cut-depth were investigated. This pro-ject seeks understanding of fundamental issues of how and why the ion-cut process affects the properties of the split layers. The approach includes study of the dose, dose rate, and the implan-tation temperature dependence of the exfoliated layer properties. In addition to the ASU/UCSD collaboration, a collaboration with M. Nastasi, team leader of the ion-solid interactions and inter-face engineering group at the Los Alamos National Laboratory is established. D. Adams of the University of the Western Cape, South Africa, UWC, a Historically Disadvantaged University will also be participating as a Visiting Scientist. This project addresses basic research issues in a topical area of materials science with significant technological relevance, and places emphasis on the integration of research and education. This project is expected to have broader impacts in education, and in technology-three dimensional integration by providing layers of semiconductors that can be vertically stacked and also provid-ing single layers of single crystal Si bonded to glass substrates. The research program is carried out by a culturally diversified team and with active involvement with a national laboratory, and involvement of D. Adams of the University of the Western Cape, South Africa will benefit the research programs and activities at UWC and will allow continuation of graduate support for the collaboration between ASU/UCSD and UWC. Graduate and undergraduate students will have opportunities to participate in a multidisciplinary and culturally diverse research and education environment.***

这个合作项目由T.L.阿尔福德和J.W.亚利桑那州州立大学（ASU）和S. S。加州大学圣地亚哥分校（UCSD）的Lau研究了硅和其他半导体的薄表面层的离子诱导分层的基本方面。离子切割工艺使用离子注入气体原子来促进薄表面层的分裂和转移到不同的基底上。虽然离子切割现象被广泛应用，但人们对这一过程的许多基本方面知之甚少。直到最近才研究了切削过程的基本力学和相关的切削深度。本项目旨在了解离子切割过程如何以及为什么会影响分裂层的性质的基本问题。该方法包括研究剂量、剂量率和剥离层性质的退火温度依赖性。除了亚利桑那州立大学/加州大学圣地亚哥分校的合作外，还与M.洛斯阿拉莫斯国家实验室离子-固体相互作用和界面工程组组长纳斯塔西成立。D.南非西开普大学的亚当斯也将作为访问科学家参加。该项目涉及材料科学领域的基础研究问题，具有重要的技术相关性，并强调研究和教育的整合。该项目预计将在教育方面产生更广泛的影响，并通过提供可以垂直堆叠的半导体层以及提供与玻璃基板结合的单晶Si单层来实现技术三维集成。该研究项目由一个文化多元化的团队进行，并与国家实验室积极参与，并参与D。南非西开普大学的亚当斯将有利于UWC的研究项目和活动，并将继续为ASU/UCSD和UWC之间的合作提供研究生支持。研究生和本科生将有机会参与多学科和文化多样性的研究和教育环境。