Fundamental Studies of Ion Cutting

亚利桑那州立大学（ASU）的T.L. Alford和J.W. Mayer以及加州大学圣地亚哥分校（UCSD）的S.S. Lau的合作项目解决了离子诱导硅和其他半导体薄表层分层的基本问题。离子切割过程使用离子注入的气体原子来促进薄表面层的分裂和转移到不同的衬底上。虽然离子切割现象被广泛应用，但人们对这一过程的许多基本方面知之甚少。直到最近才对切削过程的基本力学和相关的切削深度进行了研究。该项目旨在了解离子切割过程如何以及为什么影响分裂层的性质的基本问题。该方法包括研究剂量、剂量率和植入温度对剥离层性质的依赖关系。除了亚利桑那州立大学和加州大学圣地亚哥分校的合作外，还与洛斯阿拉莫斯国家实验室离子-固体相互作用和界面工程小组的组长M. Nastasi建立了合作关系。南非西开普省大学（UWC）的D. Adams也将作为访问科学家参加会议。UWC是一所历史上处于劣势的大学。本项目涉及材料科学领域的基础研究问题，具有重要的技术相关性，并强调研究和教育的整合。该项目预计将在教育和技术领域产生更广泛的影响——通过提供可垂直堆叠的半导体层，以及提供与玻璃基板结合的单层单晶硅，实现三维集成。该研究项目由一个文化多元化的团队进行，并积极参与一个国家实验室，南非西开普省大学的D. Adams的参与将有利于UWC的研究项目和活动，并将允许研究生继续支持亚利桑那州立大学/加州大学圣地亚哥分校和UWC之间的合作。研究生和本科生将有机会参与多学科和多元文化的研究和教育环境

This collaborative project between T.L. Alford and J.W. Mayer of Arizona State University (ASU) and S.S. Lau of the University of California, San Diego (UCSD) addresses fundamental aspects of ion-induced delamination of thin surface layers from Si and other semiconductors. The ion-cut process uses ion implanted gas atoms to promote splitting and transferring of a thin sur-face layer onto a different substrate. Although the ion-cut phenomenon is widely applied, little is known about many of the fundamental aspects of this process. It was not until very recently that the basic mechanics of the cutting process and the related cut-depth were investigated. This pro-ject seeks understanding of fundamental issues of how and why the ion-cut process affects the properties of the split layers. The approach includes study of the dose, dose rate, and the implan-tation temperature dependence of the exfoliated layer properties. In addition to the ASU/UCSD collaboration, a collaboration with M. Nastasi, team leader of the ion-solid interactions and inter-face engineering group at the Los Alamos National Laboratory is established. D. Adams of the University of the Western Cape, South Africa, UWC, a Historically Disadvantaged University will also be participating as a Visiting Scientist. This project addresses basic research issues in a topical area of materials science with significant technological relevance, and places emphasis on the integration of research and education. This project is expected to have broader impacts in education, and in technology-three dimensional integration by providing layers of semiconductors that can be vertically stacked and also provid-ing single layers of single crystal Si bonded to glass substrates. The research program is carried out by a culturally diversified team and with active involvement with a national laboratory, and involvement of D. Adams of the University of the Western Cape, South Africa will benefit the research programs and activities at UWC and will allow continuation of graduate support for the collaboration between ASU/UCSD and UWC. Graduate and undergraduate students will have opportunities to participate in a multidisciplinary and culturally diverse research and education environment.***