Ion Beam Induced Exfoliation of Silicon Structures

离子束诱导硅结构剥离

• 批准号: 9972859
• 负责人: James Mayer
• 金额: $ 36万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2003-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9972859&HistoricalAwards=false
• 关键词: Ion; Beam; Induced; Exfoliation; Silicon

9972859 Mayer This proposal addresses fundamental materials science issues underlying ion-beam induced exfoliation of silicon structures (ion-cutting)--a topic of interest in Si technology for 3-D integration of silicon based circuitry. As the density of devices on chips increases to a lithography-imposed limit, device interconnection in planar ICs is increasingly problematic. Integration of circuits in three dimensions is a possible future direction for increasing circuit packing density and functionality. In addition to homogeneous integration in vertically integrated chips (e.g. Si on Si), heterogeneous integration (e.g. Si with photonic, microwave or ferroelectric material), allows for the possibility of multiple functionality of the integrated structures. The project approach consists of four elements: 1) use of (111) and (110), in addition to (100) Si wafers, to investigate the process of patterned layer transfer. This approach should confirm if the cleavage planes of Si and the preferred location of implanted H platelet are correlated to yield an evenly transferred layer. 2) investigate the mechanism of enhanced exfoliation due to radiation damage. Co-implant Ar and H initially to test if a heavier mass of the co-implanted inert gas ion has a similar or improved effect as compared to He and B co-implanted with H. 3) Investigate the low temperature migration of H towards B and the effect in patterned layer transfer in providing an even cut. Investigate the rate of migration of H toward B by SIMS and/or forward scattering to track the motion of H atoms. 4) Study the combined effects of wafer orientation, radiation damage and electric fields to yield evenly cut patterned layers. The project is collaborative and will be carried out at both ASU and UCSD making use of the complementary nature of the combined facilities. At ASU, transmission electron microscopy and ion beam analysis is featured, and at UCSD, sample preparation and electrical evaluation are provided. There is the capability for ion beam analysis (Rutherford backscattering and channeling) at both institutions.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute new knowledge to improving the perform-ance and stability of advanced devices and circuits by providing increased fundamental understanding and a basis for designing and producing improved materials, and processing technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area.

9972859 Mayer 该提案解决了离子束诱导硅结构剥离（离子切割）的基本材料科学问题-硅技术中用于硅基电路的3-D集成的一个感兴趣的主题。随着芯片上的器件密度增加到光刻施加的极限，平面IC中的器件互连越来越成问题。三维电路集成是增加电路封装密度和功能性的可能未来方向。除了垂直集成芯片（例如Si on Si）中的均匀集成之外，异质集成（例如Si与光子、微波或铁电材料）允许集成结构的多个功能的可能性。该项目的方法包括四个要素：1）使用（111）和（110），除了（100）硅晶片，研究图案化层转移的过程。这种方法应确认Si的解理面和植入的H片晶的优选位置是否相关以产生均匀转移的层。2)研究辐射损伤引起的剥落增强的机制。首先共注入Ar和H以测试较重质量的共注入惰性气体离子与He和B与H共注入相比是否具有类似或改进的效果。3)研究低温下H向B的迁移，以及图案化层转移在提供均匀切割中的作用。通过西姆斯和/或前向散射研究H向B迁移的速率，以跟踪H原子的运动。4)研究晶片取向、辐射损伤和电场的综合影响，以产生均匀切割的图案层。该项目是合作的，将在亚利桑那州立大学和加州大学圣地亚哥分校进行，利用联合设施的互补性。在亚利桑那州立大学，透射电子显微镜和离子束分析的特点，并在UCSD，样品制备和电气评估提供。这两个机构都有离子束分析（卢瑟福背散射和沟道）的能力。%该项目涉及材料科学专题领域的基础研究问题，具有很高的潜在技术相关性。该研究将为电子/光子器件的新方面提供基础材料科学知识。从研究中获得的基本知识和理解有望通过提供更多的基本理解和设计和生产改进材料和加工技术的基础，为提高先进器件和电路的性能和稳定性贡献新的知识。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。