Reaction Chemistry of Plasma Enhanced Chemical Vapor Deposition at Atmospheric Pressure

大气压下等离子体增强化学气相沉积的反应化学

• 批准号: 9821062
• 负责人: Robert Hicks
• 金额: $ 34.9万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2002-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9821062&HistoricalAwards=false
• 关键词: Reaction; Chemistry; Plasma; Enhanced; Chemical

CTS-9821062AbstractThe objective of this project is to characterize the reaction chemistry of the plasmas-enhanced chemical vapor deposition (PECVD) of silicon dioxide and silicon nitride films at atmospheric pressure. Previous work includes that high-quality silicon-dioxide films can be deposited at rates up to 3000 Angstroms/min. using a newly developed atmospheric-pressure plasma jet. In this study, the identities of the reactive species formed in oxygen and nitrogen plasma jets is determined using optical absorption and emission spectroscopies, chemical titration, and laser-induced fluorescence. In addition, species adsorbed on film surfaces during growth are monitored by multiple-internal reflection infrared spectroscopy. Models of coupled gas and surface reactions occurring in the plasma-jet reactor are developed. By combining numerical simulations with experimental results, descriptions of the reaction mechanisms for deposition of silicon dioxide and silicon nitride are obtained.PECVD of dielective thin films is an essential part of the manufacture of semiconductor devices including integrated circuits and thin-film transistors used in flat-panel displays. This effort explores a new plasma source, the atmospheric-pressure plasma jet. It offers greater knowledge of the reaction chemistry in plasma reactors that should stimulate advances in design, operation, and control of these exists.

CTS-9821062摘要本项目的目的是表征常压下等离子体增强化学气相沉积（PECVD）二氧化硅和氮化硅薄膜的反应化学。 以前的工作包括，高品质的二氧化硅薄膜可以沉积速率高达3000埃/分钟。使用新开发的大气压等离子体射流。 在这项研究中，氧气和氮气等离子体射流中形成的活性物种的身份确定使用光学吸收和发射光谱，化学滴定，和激光诱导荧光。 此外，在生长过程中吸附在薄膜表面上的物种监测多重内反射红外光谱。 耦合的气体和表面反应发生在等离子体射流反应器的模型。 通过数值模拟和实验结果相结合，描述了沉积二氧化硅和氮化硅的反应机理。介电薄膜的PECVD是制造半导体器件（包括用于平板显示器的集成电路和薄膜晶体管）的重要组成部分。 这项工作探索了一种新的等离子体源，大气压等离子体射流。 它提供了更多的等离子体反应器中的反应化学知识，应该刺激这些存在的设计，操作和控制的进步。