Reaction Chemistry of Plasma Enhanced Chemical Vapor Deposition at Atmospheric Pressure

摘要本项目的目的是表征常压下等离子体增强化学气相沉积（PECVD）二氧化硅和氮化硅薄膜的反应化学性质。以前的工作包括高质量的二氧化硅薄膜可以以高达3000埃/分钟的速度沉积。使用新开发的大气压等离子体射流。在这项研究中，利用光学吸收和发射光谱、化学滴定和激光诱导荧光来确定氧和氮等离子体射流中形成的活性物质的身份。此外，利用多次内反射红外光谱法对生长过程中吸附在薄膜表面的物质进行了监测。建立了等离子体喷射反应器中气体与表面耦合反应的模型。将数值模拟与实验结果相结合，得到了二氧化硅和氮化硅沉积反应机理的描述。选择性薄膜的PECVD是制造半导体器件的重要组成部分，包括集成电路和用于平板显示器的薄膜晶体管。这项工作探索了一种新的等离子体源，大气压等离子体射流。它提供了更多关于等离子体反应器中反应化学的知识，应该刺激这些存在的设计，操作和控制的进步。

CTS-9821062AbstractThe objective of this project is to characterize the reaction chemistry of the plasmas-enhanced chemical vapor deposition (PECVD) of silicon dioxide and silicon nitride films at atmospheric pressure. Previous work includes that high-quality silicon-dioxide films can be deposited at rates up to 3000 Angstroms/min. using a newly developed atmospheric-pressure plasma jet. In this study, the identities of the reactive species formed in oxygen and nitrogen plasma jets is determined using optical absorption and emission spectroscopies, chemical titration, and laser-induced fluorescence. In addition, species adsorbed on film surfaces during growth are monitored by multiple-internal reflection infrared spectroscopy. Models of coupled gas and surface reactions occurring in the plasma-jet reactor are developed. By combining numerical simulations with experimental results, descriptions of the reaction mechanisms for deposition of silicon dioxide and silicon nitride are obtained.PECVD of dielective thin films is an essential part of the manufacture of semiconductor devices including integrated circuits and thin-film transistors used in flat-panel displays. This effort explores a new plasma source, the atmospheric-pressure plasma jet. It offers greater knowledge of the reaction chemistry in plasma reactors that should stimulate advances in design, operation, and control of these exists.