Site-Specific P-Type Doping of Indium-Gallium-Arsenide with Carbon by Metalorganic Chemical Vapor Deposition

摘要 小行星9422602 该合作项目的目标是开发新的有机金属前驱体，用于通过金属有机化学气相沉积（MOCVD）对砷化铟镓（In0.53Ga0.47As）进行碳受体掺杂。一个新的家庭的“特定位点”的掺杂剂将进行测试。将在微型MOCVD反应器中筛选源的分解动力学和掺杂效率。此外，它们在InGaAs（100）表面上的分解机制将通过红外和X射线光电子能谱以及扫描隧道显微镜来确定。这些研究将确定有机金属源的最佳组合物。碳掺杂剂将用于生长InGaAs/InP异质结双极晶体管（HBT）。这些晶体管的性能特性将与使用标准锌化合物进行p型掺杂而合成的晶体管进行比较。这项研究将对MOCVD生长技术产生重大影响。它将确定化合物半导体的受体掺杂的基础上的特定位点的表面化学。此外，这将有望解决碳掺杂InGaAs和InP的问题，从而可以通过MOCVD合成更高性能的电子器件。来自大学、海军和工业界的一个科学家小组将参与这个项目。部分支持由NSF提供的研究在大学进行的部分。 砷化铟镓和磷化铟的外延薄膜用于各种电子和光电器件。如今，这些膜的金属有机化学气相沉积（MOCVD）在范围上受到限制，因为该工艺不能以高浓度和尖锐的掺杂剂分布掺杂层p型。碳是这些半导体的理想受体。然而，没有有机金属化合物可提供高浓度的活性炭，同时保持所需的组成和膜的结晶质量。本项目的目标是开发新的有机金属前驱体，用于MOCVD法对砷化铟镓进行碳受体掺杂。一个新的家庭的“特定位点”的掺杂剂将进行测试。

Abstract 9422602 Hicks The objective of this collaborative project is to develop new organometallic precursors for carbon-acceptor doping of indium gallium arsenide (In0.53Ga0.47As) by metalorganic chemical vapor deposition (MOCVD). A novel family of "site-specific" dopants will be tested. The decomposition kinetics and doping efficiencies of the sources will be screened in a micro-MOCVD reactor. In addition, their mechanisms for decomposition on the InGaAs(100) surface will be determined by infrared and x-ray photoemission spectroscopies and by scanning tunneling microscopy. These studies will identify the optimal compositions of the organometallic sources. Promising carbon dopants will be used to grow InGaAs/InP heterojunction bipolar transistors (HBTs). The performance characteristics of these transistors will be compared to those synthesized using standard zinc compounds for p-type doping. This research will have a large impact on MOCVD growth technology. It will identify the site-specific surface chemistry underlying acceptor doping of compound semiconductors. Furthermore, it will hopefully solve the problem of carbon doping InGaAs and InP, so that much higher performance electronic devices can be synthesized by MOCVD. A team of scientists from University, Navy, and Industry will participate in this project. Partial support is provided by NSF for the portion of the research conducted at the University. %%% Epitaxial thin films of indium gallium arsenide and indium phosphide are used in a variety of electronic and optoelectronic devices. Today, metalorganic chemical vapor deposition (MOCVD) of these films is limited in scope because this process is not capable of doping the layers p-type in high concentration and with sharp dopant profiles. Carbon is the ideal acceptor for these semiconductors. However, no organometallic compounds are available which provide a high concentration of active carbon, while maintaining the desired composition and crystal-qual ity of the film. The objective of this project is to develop new organometallic precursors for carbon-acceptor doping of indium gallium arsenide by MOCVD. A novel family of "site-specific" dopants will be tested.