Site-Specific P-Type Doping of Indium-Gallium-Arsenide with Carbon by Metalorganic Chemical Vapor Deposition

金属有机化学气相沉积法对砷化铟镓进行碳定点 P 型掺杂

• 批准号: 9422602
• 负责人: Robert Hicks
• 金额: $ 14万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-06-01 至 1998-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9422602&HistoricalAwards=false
• 关键词: Site; Specific; Type; Doping; Indium

Abstract 9422602 Hicks The objective of this collaborative project is to develop new organometallic precursors for carbon-acceptor doping of indium gallium arsenide (In0.53Ga0.47As) by metalorganic chemical vapor deposition (MOCVD). A novel family of "site-specific" dopants will be tested. The decomposition kinetics and doping efficiencies of the sources will be screened in a micro-MOCVD reactor. In addition, their mechanisms for decomposition on the InGaAs(100) surface will be determined by infrared and x-ray photoemission spectroscopies and by scanning tunneling microscopy. These studies will identify the optimal compositions of the organometallic sources. Promising carbon dopants will be used to grow InGaAs/InP heterojunction bipolar transistors (HBTs). The performance characteristics of these transistors will be compared to those synthesized using standard zinc compounds for p-type doping. This research will have a large impact on MOCVD growth technology. It will identify the site-specific surface chemistry underlying acceptor doping of compound semiconductors. Furthermore, it will hopefully solve the problem of carbon doping InGaAs and InP, so that much higher performance electronic devices can be synthesized by MOCVD. A team of scientists from University, Navy, and Industry will participate in this project. Partial support is provided by NSF for the portion of the research conducted at the University. %%% Epitaxial thin films of indium gallium arsenide and indium phosphide are used in a variety of electronic and optoelectronic devices. Today, metalorganic chemical vapor deposition (MOCVD) of these films is limited in scope because this process is not capable of doping the layers p-type in high concentration and with sharp dopant profiles. Carbon is the ideal acceptor for these semiconductors. However, no organometallic compounds are available which provide a high concentration of active carbon, while maintaining the desired composition and crystal-qual ity of the film. The objective of this project is to develop new organometallic precursors for carbon-acceptor doping of indium gallium arsenide by MOCVD. A novel family of "site-specific" dopants will be tested.

本合作项目的目标是通过金属有机化学气相沉积（MOCVD）技术，开发新的有机金属前驱体，用于碳受体掺杂砷化铟镓（In0.53Ga0.47As）。一种新型的“特定位点”掺杂剂将被测试。将在微型mocvd反应器中对源的分解动力学和掺杂效率进行筛选。此外，它们在InGaAs（100）表面的分解机制将通过红外和x射线光发射光谱以及扫描隧道显微镜来确定。这些研究将确定有机金属源的最佳组成。有前途的碳掺杂剂将用于生长InGaAs/InP异质结双极晶体管（HBTs）。这些晶体管的性能特征将与使用标准锌化合物合成的p型掺杂的晶体管进行比较。本研究将对MOCVD生长技术产生重大影响。它将确定在化合物半导体的受体掺杂下的位点特异性表面化学。此外，它有望解决碳掺杂InGaAs和InP的问题，从而可以通过MOCVD合成更高性能的电子器件。一个由大学、海军和工业界的科学家组成的团队将参与这个项目。美国国家科学基金会为在该大学进行的部分研究提供部分支持。砷化铟镓和磷化铟的外延薄膜用于各种电子和光电子器件。目前，金属有机化学气相沉积（MOCVD）的应用范围受到限制，因为这种方法不能高浓度地掺杂p型层和具有尖锐的掺杂轮廓。碳是这些半导体的理想受体。然而，没有有机金属化合物可以提供高浓度的活性炭，同时保持所需的膜的组成和晶体质量。本项目的目的是开发新的有机金属前驱体，用于碳受体掺杂砷化铟镓的MOCVD。一种新型的“特定位点”掺杂剂将被测试。