Site-Specific P-Type Doping of Indium-Gallium-Arsenide with Carbon by Metalorganic Chemical Vapor Deposition

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Abstract 9422602 Hicks The objective of this collaborative project is to develop new organometallic precursors for carbon-acceptor doping of indium gallium arsenide (In0.53Ga0.47As) by metalorganic chemical vapor deposition (MOCVD). A novel family of "site-specific" dopants will be tested. The decomposition kinetics and doping efficiencies of the sources will be screened in a micro-MOCVD reactor. In addition, their mechanisms for decomposition on the InGaAs(100) surface will be determined by infrared and x-ray photoemission spectroscopies and by scanning tunneling microscopy. These studies will identify the optimal compositions of the organometallic sources. Promising carbon dopants will be used to grow InGaAs/InP heterojunction bipolar transistors (HBTs). The performance characteristics of these transistors will be compared to those synthesized using standard zinc compounds for p-type doping. This research will have a large impact on MOCVD growth technology. It will identify the site-specific surface chemistry underlying acceptor doping of compound semiconductors. Furthermore, it will hopefully solve the problem of carbon doping InGaAs and InP, so that much higher performance electronic devices can be synthesized by MOCVD. A team of scientists from University, Navy, and Industry will participate in this project. Partial support is provided by NSF for the portion of the research conducted at the University. %%% Epitaxial thin films of indium gallium arsenide and indium phosphide are used in a variety of electronic and optoelectronic devices. Today, metalorganic chemical vapor deposition (MOCVD) of these films is limited in scope because this process is not capable of doping the layers p-type in high concentration and with sharp dopant profiles. Carbon is the ideal acceptor for these semiconductors. However, no organometallic compounds are available which provide a high concentration of active carbon, while maintaining the desired composition and crystal-qual ity of the film. The objective of this project is to develop new organometallic precursors for carbon-acceptor doping of indium gallium arsenide by MOCVD. A novel family of "site-specific" dopants will be tested.