Nanoscience of Metalorganic Chemical Vapor Deposition of Compound Semiconductors

提案标题：化合物半导体金属有机化学气相沉积的纳米科学提案编号：CTS-0094484主要研究员：罗伯特·希克斯该项目的目标是了解金属有机化学气相沉积(MOCVD)生长、掺杂和钝化磷化铟(InP)、砷化铟(InGaAs)和氮化镓(InGaAsN)过程中所涉及的表面反应。这项研究将扫描隧道显微镜、红外光谱、反射差谱和X射线光电子能谱对表面结构的实验研究与从头算量子化学计算相结合，以提供对控制MOCVD生长的表面过程的深入了解。研究计划包括三个不同主题的研究：V族源对InP的分解反应，有意掺杂的表面化学，以及有机单分子膜的表面钝化。将测定磷化氢、砷、氨、二甲基肼、硅烷、四硅基甲烷和环戊烯在InP上的表面反应化学性质。为了帮助识别吸附的物种，红外光谱将与量子化学计算的结果进行比较。这项工作在制造用于无线和光通信系统的异质结双极晶体管方面具有应用价值。

Proposal Title: Nanoscience of Metalorganic Chemical Vapor Deposition of Coumpound SemiconductorsProposal Number: CTS-0094484Principal Investigator:Robert HicksInstitution: University of California Los AngelesThe objective of this project is to understand the surface reactions involved in the growth, doping, and passivation of indium phosphide (InP), indium gallium arsenide (InGaAs), and indium gallium arsenide nitride (InGaAsN) by metalorganic chemical vapor deposition (MOCVD). The research combines experimental studies of the surface structure using scanning tunneling microscopy, infrared spectroscopy, reflectance-difference spectroscopy, and x-ray photoemission spectroscopy with ab initio quantum chemistry calculations to provide insights into the surface processes that control MOCVD growth. The research plan encompasses a study of three different topics: the decomposition reactions of group V sources on InP, the surface chemistry of intentional dopants, and the surface passivation by organic monolayers. The surface reaction chemistry of phosphine, arsine, ammonia, dimethylhydrazine, silane, tetrasilylmethane, and cyclopentene on InP will be determined. To help identify adsorbed species, infrared bands will be compared with results from quantum chemistry calculations. The work has application in the fabrication of heterojunction bipolar transistors used in wireless and optical communications systems.