Nanoscience of Metalorganic Chemical Vapor Deposition of Compound Semiconductors

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Proposal Title: Nanoscience of Metalorganic Chemical Vapor Deposition of Coumpound SemiconductorsProposal Number: CTS-0094484Principal Investigator:Robert HicksInstitution: University of California Los AngelesThe objective of this project is to understand the surface reactions involved in the growth, doping, and passivation of indium phosphide (InP), indium gallium arsenide (InGaAs), and indium gallium arsenide nitride (InGaAsN) by metalorganic chemical vapor deposition (MOCVD). The research combines experimental studies of the surface structure using scanning tunneling microscopy, infrared spectroscopy, reflectance-difference spectroscopy, and x-ray photoemission spectroscopy with ab initio quantum chemistry calculations to provide insights into the surface processes that control MOCVD growth. The research plan encompasses a study of three different topics: the decomposition reactions of group V sources on InP, the surface chemistry of intentional dopants, and the surface passivation by organic monolayers. The surface reaction chemistry of phosphine, arsine, ammonia, dimethylhydrazine, silane, tetrasilylmethane, and cyclopentene on InP will be determined. To help identify adsorbed species, infrared bands will be compared with results from quantum chemistry calculations. The work has application in the fabrication of heterojunction bipolar transistors used in wireless and optical communications systems.