Surface Chemistry and Kinetics of the Metalorganic Chemical Vapor Deposition of II-VI Materials

II-VI材料金属有机化学气相沉积的表面化学和动力学

• 批准号: 9531785
• 负责人: Robert Hicks
• 金额: $ 29万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-08-15 至 1999-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9531785&HistoricalAwards=false
• 关键词: Surface; Chemistry; Kinetics; Metalorganic; Chemical

ABSTRACT CTS-9631785 This is a study of the surface chemistry underlying the deposition of cadmium zinc telluride alloy films by metallorganic chemical vapor deposition (MOCVD). It includes characterizing the atomic structure and composition of the film as it nucleates and grows on a gallium arsenide or a germanium (001) surface. Alloy growth kinetics are determined by a combination of ultrahigh vacuum (UHV) surface-science experiments, macroscopic measurements of film deposition rates, and numerical simulations of the MOCVD process. The heteroepitaxy of cadmium zinc telluride on gallium arsenide or germanium (001) is studied using a UHV scanning tunneling microscope to monitor the evolution of the interface structure as each layer of atoms is deposited. The quality of the films is evaluated using transmission electron microscopy and photoluminescence measurements. Epitaxial thin films of II-VI compounds such as cadmium zinc telluride are used in a variety of optoelectronic and magentic devices. Metallorganic chemical vapor deposition (MOCVD) is a promising method for depositing these films. However, it is a challenging process in a manufacturing environment because the film growth rate and composition depend on the intrinsic reaction kinetics, making them very sensitive to the operating conditions. This effort provides the basic knowledge needed to provide reproducible growth of thin films of II-VI compound semiconductors. ***

摘要CTS-9631785 研究了金属有机物化学气相沉积（MOCVD）法制备碲锌镉合金薄膜的表面化学性质。 它包括表征原子结构和膜的组成，因为它成核和生长在砷化镓或锗（001）表面。 合金生长动力学是由真空度和真空度的组合决定的。 (UHV)表面科学实验，薄膜沉积速率的宏观测量，以及MOCVD工艺的数值模拟。 利用超高真空扫描隧道显微镜研究了碲锌镉在砷化镓或锗（001）上的异质外延生长，以监测每层原子沉积时界面结构的演变。 使用透射电子显微镜和光致发光测量的膜的质量进行评价。 II-VI族化合物如碲锌镉的外延薄膜被用于各种光电和磁器件中。 金属有机物化学气相沉积（MOCVD）是一种很有前途的制备此类薄膜的方法。 然而，在制造环境中，这是一个具有挑战性的过程，因为薄膜的生长速率和组成取决于固有的反应动力学，使它们对操作条件非常敏感。 这项工作提供了提供II-VI族化合物半导体薄膜的可重复生长所需的基本知识。 ***