Engineering Research Equipment: Scanning Tunneling Microscope for Studying Semiconductor Surface Reactions
Engineering Research Equipment: Scanning Tunneling Microscope for Studying Semiconductor Surface Reactions
批准号:
9500387
负责人:
Robert Hicks
金额:
$8.29万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-03-15 至 1997-02-28
中文摘要
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英文摘要
CTS-9500387 Robert Hicks A scanning tunnelling microscope (STM) is added to a system consisting of a reactor for vapor-phase expitaxy and a chamber for surface analysis. These are interfaced with an ultrahigh-vacuum server that allows transfer of samples among the three stations without exposure to air. The STM is to be used to study the surface structure of II-VI films, the atomic ordering of III-V alloys, the heteroepitaxy of compound semiconductors on silicon, and the molecular kinetics of III-V and II-VI organmetallic vapor-phase epitaxy (OMVPE).
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Distributions for Optical Design
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批准号:0908299
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项目类别:Standard Grant
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资助金额:$26.4万
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财政年份:2009
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负责人:Robert Hicks
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依托单位:
Micromirror Arrays for Imaging Sensors
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批准号:0413012
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项目类别:Continuing Grant
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资助金额:$34.0万
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Digital Lenses
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批准号:0211283
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2003
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负责人:Robert Hicks
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Nanoscience of Metalorganic Chemical Vapor Deposition of Compound Semiconductors
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批准号:0004484
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项目类别:Standard Grant
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资助金额:$35.0万
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财政年份:2001
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负责人:Robert Hicks
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依托单位:
Reaction Chemistry of Plasma Enhanced Chemical Vapor Deposition at Atmospheric Pressure
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批准号:9821062
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项目类别:Continuing Grant
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资助金额:$34.9万
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财政年份:1999
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负责人:Robert Hicks
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依托单位:
Chemistry of the Metalorganic Chemical Vapor Deposition of InGaP/GaAs Heterojunction Bipolar Transistors
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批准号:9804719
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项目类别:Continuing Grant
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资助金额:$22.3万
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财政年份:1998
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负责人:Robert Hicks
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依托单位:
Surface Chemistry and Kinetics of the Metalorganic Chemical Vapor Deposition of II-VI Materials
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批准号:9531785
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项目类别:Continuing Grant
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资助金额:$29.0万
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财政年份:1996
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负责人:Robert Hicks
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依托单位:
Site-Specific P-Type Doping of Indium-Gallium-Arsenide with Carbon by Metalorganic Chemical Vapor Deposition
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批准号:9422602
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项目类别:Standard Grant
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资助金额:$14.0万
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财政年份:1995
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负责人:Robert Hicks
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依托单位:
Engineering Research Equipment: Organometallic Vapor-Phase Epitaxy Reactor with Ultrahigh-Vacuum Interface and Sample Manipulator
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批准号:9310583
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项目类别:Standard Grant
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资助金额:$4.91万
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财政年份:1993
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负责人:Robert Hicks
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依托单位:
The Molecular Kinetics of the Organometallic Vapor-Phase Epitaxy of II-VI Materials
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批准号:9121811
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项目类别:Continuing Grant
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资助金额:$23.9万
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财政年份:1992
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负责人:Robert Hicks
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依托单位:
Research Initiation: Effect of Metal-Support Interactions on Heptane Dehydrocylization over Platinum on Barium- Potassium Zeolite L
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批准号:8810326
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1988
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负责人:Robert Hicks
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依托单位:
国内基金
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