Chemistry of the Metalorganic Chemical Vapor Deposition of InGaP/GaAs Heterojunction Bipolar Transistors

小行星9804719 这个大学/工业合作GOALI项目的目标是确定基本MOCVD工艺化学，这对更好地理解和随后开发一种强大的制造技术至关重要，该技术能够生产具有尖锐界面和精确掺杂剂分布的“无缺陷”化合物半导体层。将进行研究以确定应变和掺杂对InGaAs/GaAs和InGaP/GaAs（001）表面的物理和化学的影响。此外，替代前体将研究这些材料的低温生长和掺杂。通过MOCVD产生的表面结构将通过红外线、X射线光电子能谱和热脱附光谱以及扫描隧道显微镜原位表征。薄膜的体特性将通过三轴X射线衍射、电子显微镜和霍尔分析来表征。新的沉积工艺，开发将进一步审查和测试异质结双极晶体管（HBT）的制造。外延层将由行业合作伙伴罗克韦尔加工成器件，然后进行测试，以比较其相对于商业HBT产品的性能。该项目由DMR电子材料和固态化学计划，海军研究办公室和MPS OMA（多学科活动办公室）共同支持。 该项目解决了材料科学领域的基础研究问题，具有很高的潜在技术相关性。 该研究将为电子/光子器件的新方面提供基础材料科学知识。 现在已有实验工具，可以在原子水平上观察基本表面过程，如果能更好地了解这些过程，就可以在基础科学和技术方面取得进展。从研究中获得的基本知识和理解，预计将有助于提高先进的d设备和电路的性能和稳定性，提供一个基本的理解和基础，设计和生产改进的材料，材料组合。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。从事该项目的学生和博士后学者将在工业合作伙伴的设施中获得加工和测试设备的宝贵经验。 ***

9804719 Hicks The objective of this University/Industry collaborative GOALI project is to identify fundamental MOCVD process chemistry crucial to greater understanding and subsequent development of a robust manufacturing technology capable of producing "defect-free" compound semiconductor layers with sharp interfaces and precise dopant profiles. Research will be undertaken to determine the effects of strain and doping on the physics and chemistry of InGaAs/GaAs and InGaP/GaAs (001) surfaces. In addition, alternative precursors will be studied for low-temperature growth and doping of these materials. Surface structures produced by MOCVD will be characterized in situ by infrared, x-ray photoemission and thermal desorption spectroscopies, and by scanning tunneling microscopy. Bulk properties of films will be characterized by triple-axis x-ray diffraction, electron microscopy, and Hall analysis. New deposition processes that are developed will be further examined and tested for fabrication of heterojunction bipolar transistors (HBTs). The epitaxial layers will be processed into devices by industry partner, Rockwell, and then tested to compare their performance relative to commercial HBT products. The project is co-supported by the DMR Electronic Materials and Solid State Chemistry Programs, the Office of Naval Research, and the MPS OMA(Office of Multidisciplinary Activities). %%% The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advance d devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. Students and postdoctoral scholars working on this project will obtain valuable experience processing and testing devices at the facilities of industrial partners. ***