Materials Growth and Processing Research for Wide-Bandgap Semiconductor Heterostructures and Devices

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9312947 Dupuis Research will be carried out to develop a fundamental understanding of conventional and low temperature metalorganic chemical vapor epitaxial materials growth and novel device processing techniques for wide-bandgap III-V compound semiconductors in the system consisting of the AlGaInN quaternary and related ternary and binary alloys. Lattice-matched and intentionally lattice-mismatched heteroepitaxial heterostructures will be grown in this materials system using both low-pressure metalorganic chemical vapor deposition, and low-temperature epitaxial growth by flow-rate modulation. In addition, this program will study the fundamental structural, electronic, and optical materials properties, as well as the heterojunction band alignments of these materials. %%% The primary goal of this program is to develop a fundamental-understanding of the epitaxial growth, processing, and properties of wide bandgap semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. This research program is strongly coupled to direct collaborative efforts with US optoelectronic industrial research and development groups. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***