NOVEL HIGH-PERFORMANCE III-N HBTS FOR NEXT-GENERATION ENERGY-EFFICIENT SYSTEMS

适用于下一代节能系统的新型高性能 III-N HBTS

• 批准号: 0725736
• 负责人: Russell Dupuis
• 金额: $ 28.16万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-01 至 2011-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0725736&HistoricalAwards=false
• 关键词: NOVEL; PERFORMANCE; III; HBTS; NEXT

ECCS-0725736R. Dupuis, GA Tech Research CorpThe objective of this research is to develop a new high-voltage III-N HBT technology to address the critical need for increased efficiency in current energy use from power electronics perspectives. The approach is to utilize the synergistic combination of team?s unique capabilities, including (1) the commercial-scale III-N MOCVD growth process technology to develop an advanced material technology of nitride-based transistors; (2) the design of optimized high-power device structures and the development of manufacturable fabrication techniques; and (3) detailed Monte-Carlo device simulations to create a new level of technology that can expand the high-voltage circuitry envelop with decades of performance improvements to achieve highly energy efficient electronic systems.Intellectual MeritIII-nitride based heterojunction bipolar transistors (HBTs) proposed in this program will have a potential to create the devices that can offer an increased blocking voltage with a factor of 10 (or higher) and a reduced on-state power loss by a factor of at least 100 times when compared with currently available silicon technologies, which is one of the major issues in demonstrating high-efficiency high-voltage DC-AC conversion.Broader ImpactsThe success in this program will drastically improve the energy utilization efficiency in many high-power usage business sectors. These industry sectors currently are responsible for major electric energy supply or consumption and are suffering high premium on the electric energy loss in power electronics. The proposed III-N HBT technology will offer a much improved semiconductor device alternative to reduce energy loss during circuit switching and voltage conversion.

ECCS-0725736R。这项研究的目标是开发一种新的高压III-N HBT技术，以满足从电力电子学角度提高当前能源使用效率的迫切需求。 方法是利用团队的协同组合？的独特能力，包括（1）商业规模的III-N MOCVD生长工艺技术，以开发氮化物基晶体管的先进材料技术;（2）优化的大功率器件结构的设计和可制造的制造技术的开发;和（3）详细的蒙特-卡罗器件模拟，以创造一个新的技术水平，可以扩大高，本计划提出的基于MeritIII族氮化物的异质结双极晶体管（HBT）将有可能创造出能够提供10%的阻断电压的器件（或更高），并且与当前可用的硅技术相比，导通状态功率损耗至少降低100倍，这是展示高效高压DC-AC转换的主要问题之一。更广泛的影响该计划的成功将大大提高许多高功率使用业务部门的能源利用效率。 这些工业部门目前负责主要的电能供应或消耗，并且在电力电子中的电能损失方面遭受高溢价。 所提出的III-N HBT技术将提供一种大大改进的半导体器件替代方案，以减少电路切换和电压转换期间的能量损耗。