GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications

发射波长为？= 1.33或1.55 m是现代信息技术时代光纤通信系统中最重要、应用最广泛的光电器件之一。对于光纤通信，与InP晶格匹配的lnGaAsP季III-V半导体材料体系覆盖了光纤中低色散或低衰减对应的波长范围。因此，利用在InP衬底上生长的InGaAsP有源层，已经开发出用于光通信的低色散或低衰减激光器并实现了商业化。然而，基于inp的激光器与基于gaas的激光器相比，通常具有较差的特性性能。特别是在垂直腔面发射激光器（VCSELs）中，由于缺乏良好的晶格匹配分布式布拉格反射器（DBR）材料组合，lnP基激光器一直存在问题，该材料组合应具有高折射率对比度，低电阻和低热阻。与基于lnp的vcsel相比，具有AlAs/GaAs DBR反射镜的GaAs vcsel具有更好的性能。然而，系统的性能特性，如传输容量，受到兼容多模光纤带宽的限制，因为它们具有短波长的光谱范围(?~O。85米)。为了获得高性能的长波长激光器，理想的实际组合应该是在长波长范围内发射与成熟的gaas基激光技术兼容的“有源层”。与基于inp的替代体系相比，GaAs体系具有几个重要的优势，包括更大的晶圆处理面积、更好的热性能、更高的掺杂浓度、氧化兼容材料体系和高性能DBR材料。已经提出并研究了几种可能的方法。其中最有希望的是在这里探索。利用MOCVD进行InAlGaAsSb外延生长的研究是目前国际上日益关注的一个研究课题。实现高质量的外延层和异质结是发展先进半导体器件，特别是VCSELS的重要因素。本文提出的研究将导致X=1.33pm vcsel的实际实现，以及sb基异质结的基本性质研究和Ill-Sb量子点的研究。Sb生长和基本性质研究的主要课题与器件的第二个研究课题直接相关，特别是vcsel，我们已经与安捷伦技术公司的合作者一起探索了这个领域。本研究将为Ill-Sb材料中二维受限系统的物理学提供新的基本见解。这些主题在光电子学和电子学领域具有广泛影响的强大潜力，例如…高速电子技术可以得到发展。

Long-wavelength lasers emitting at ?= 1.33 or 1.55 m are one of the most important and widely used optoelectronic devices for optical fiber communication systems in the present modern information technology era. For optical-fiber communications, the lnGaAsP quaternary III-V semiconductor material system, which is lattice-matched to InP, covers the wavelength range corresponding to low dispersion or low attenuation in optical fibers. Therefore, lasers for optical communication application with low dispersion or low attenuation have been developed and commercialized using an InGaAsP active layer grown on InP substrates. However, InP-based lasers have generally inferior characteristic performance compared to GaAs-based lasers. Especially for vertical-cavity surface-emitting lasers (VCSELs), lnP -based lasers have been problematic due to the lack of good lattice-matched distributed Bragg reflector (DBR) material combinations, which should have high refractive index contrast, low electrical resistance, and low thermal resistance. Compared to lnP-based VCSELs, GaAs-based VCSELs with AlAs/GaAs DBR mirrors have better characteristics. However, the system performance characteristics, such as the transmission capacity, are limited by the bandwidth of compatible multimode fibers, since they have a short-wavelength spectral range (?~O.85 m).To obtain high-performance long-wavelength lasers, the ideal practical combination should be that of an ~active layer" emitting in the long-wavelength range compatible with the well-established GaAs-based laser technologies. The GaAs system offers several important advantages over the alternate InP-based system, including larger area wafer processing, better thermal properties higher doping concentrations, an oxidation-compatible material system, and high-performance DBR materials. Several possible approaches have been proposed and investigated. One of the most promising is explored here.The study of InAlGaAsSb epitaxial growth using MOCVD is a research topic that is of increasing interest throughout the world. The realization of high-quality epitaxial layers and heterojunctions are important elements in the development of advanced semiconductor devices, in particular, VCSELS. The research proposed here will result in the practical realization of X=1.33pm VCSELs as well as for the study of the fundamental properties of Sb-based heterojunctions and in the study of Ill-Sb quantum dots. The work of the primary topic of the study of Sb growth and fundamental properties couples directly to that of a second research topic on devices, specifically, VCSELs-an area that we are already exploring with collaborators at Agilent Technologies. This research will provide new fundamental insight into the physics of two-dimensionally confined systems in Ill-Sb materials. These topics have a strong potential for broad impact in optoelectronics and also in electronics, e.g.. high-speed electronics could be developed.