Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices

这个FRG项目是德克萨斯大学、奥斯汀大学、哈佛大学和弗吉尼亚大学的研究人员共同努力的结果。该项目致力于在高能可见光区域实现高性能激光二极管的材料科学方法：(1)在GaP衬底上生长和表征由直接带隙三元合金(例如InxGa1-Xp)组成的III-P基宽禁带自组装量子点(SAQD)，以及(2)在GaP衬底上生长InxAl1-Xp(x=0.6~1.0)量子点。这些SAQD材料和激光器将被研究，以产生优化光电子应用所需的基本知识，例如用于全色激光显示器的绿色和黄色光谱区域发射的光源，用于全息存储器存储的光源，以及用于低成本塑料光纤光通信系统的高速光源。这项研究致力于从根本上洞察III-V材料中二维受限系统的物理学。我们将探索III-磷化物量子点的生长和性质，并将利用应变控制来发展对均匀量子点阵列生长的理解。%该项目解决了材料科学中具有高度技术相关性的主题领域的基础研究问题。现在可以使用实验工具对基本的表面过程进行原子水平的观察，如果更好地了解这些过程，就可以推动基础科学和技术的进步。这项工作的结果可能会使材料生长的可靠控制达到一个新的水平，使具有可重复性的半导体器件能够在各种学术和商业环境中获得。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。该项目涉及电气和计算机工程、物理和材料专业的学生和教师的合作工作。*

This FRG project is a collaborative effort between researchers at U. TX, Austin, Harvard U., and U. VA. The project addresses materials science based approaches to achieving high-performance laser diodes in the high-energy visible region: (1) growth and characterization of III-P-based wide-bandgap self-assembled quantum dots(SAQD) composed of direct-bandgap ternary alloys, e.g., InxGa1-xP on GaAs substrates, and (2) growth of InxAl1-xP ( x = 0.6 to ~1.0) quantum dots on GaP substrates. These SAQD materials and lasers will be studied to generate the basic knowledge required to optimize such structures for optoelectronic applications such as light sources emitting in the green and yellow spectral regions for full-color laser displays, sources for holographic memory storage, and high-speed light sources for low-cost plastic-fiber-based optical communications systems. The research strives for fundamental insight into the physics of two-dimensionally confined systems in III-V materials. The growth and properties of III-phosphide quantum dots will be explored and the control of strain will be employed to develop an understanding of the growth of uniform QD arrays. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The results of this work may allow a new level of reliable control of materials growth, allowing semiconductor devices with reproducible properties to be attained in a variety of academic and commercial settings. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project involves the collaborative work of students and faculty in Electrical and Computer Engineering, Physics, and Materials.***